FDD3580

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Terminations :

2

Drain to Source Voltage (Vdss) :

80V

Case Connection :

DRAIN

Terminal Finish :

MATTE TIN

JESD-30 Code :

R-PSSO-G2

Rds On (Max) @ Id, Vgs :

29m Ω @ 7.7A, 10V

Gate Charge (Qg) (Max) @ Vgs :

49nC @ 10V

Pbfree Code :

yes

Peak Reflow Temperature (Cel) :

260

Drain-source On Resistance-Max :

0.029Ohm

Transistor Element Material :

SILICON

Mounting Type :

Surface Mount

Surface Mount :

yes

Vgs(th) (Max) @ Id :

4V @ 250µA

Reach Compliance Code :

Unknown

Qualification Status :

COMMERCIAL

Operating Temperature :

-55°C~175°C TJ

Configuration :

SINGLE WITH BUILT-IN DIODE

DS Breakdown Voltage-Min :

80V

Number of Elements :

1

Power Dissipation-Max :

3.8W Ta 42W Tc

Current - Continuous Drain (Id) @ 25°C :

7.7A Ta

Pulsed Drain Current-Max (IDM) :

50A

Packaging :

Tape and Reel (TR)

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Terminal Position :

Single

Operating Mode :

ENHANCEMENT MODE

Vgs (Max) :

±20V

Series :

PowerTrench®

Terminal Form :

Gull wing

Drain Current-Max (Abs) (ID) :

7.7A

Avalanche Energy Rating (Eas) :

245 mJ

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

JESD-609 Code :

e3

FET Type :

N-Channel

Input Capacitance (Ciss) (Max) @ Vds :

1.76pF @ 40V

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Pin Count :

3