FDD3672-F085
- Mfr.Part #
- FDD3672-F085
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- FDD3672 - N-CHANNEL ULTRAFET TRE
- Stock
- 165,846
- In Stock :
- 165,846
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Current - Continuous Drain (Id) @ 25°C :
- 44A Tc
- Reach Compliance Code :
- not_compliant
- Number of Terminations :
- 2
- JESD-30 Code :
- R-PSSO-G2
- FET Type :
- N-Channel
- Case Connection :
- DRAIN
- RoHS Status :
- ROHS3 Compliant
- Drain Current-Max (Abs) (ID) :
- 44A
- Input Capacitance (Ciss) (Max) @ Vds :
- 1635pF @ 25V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Pbfree Code :
- yes
- Terminal Finish :
- Tin (Sn)
- Surface Mount :
- yes
- Number of Elements :
- 1
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Drain-source On Resistance-Max :
- 0.028Ohm
- Transistor Element Material :
- SILICON
- Factory Lead Time :
- 2 Weeks
- Rds On (Max) @ Id, Vgs :
- 47m Ω @ 21A, 6V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- DS Breakdown Voltage-Min :
- 100V
- JESD-609 Code :
- e3
- Vgs (Max) :
- ±20V
- JEDEC-95 Code :
- TO-252AA
- Series :
- Automotive, AEC-Q101, UltraFET™
- Transistor Application :
- SWITCHING
- Power Dissipation-Max :
- 144W Tc
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Gate Charge (Qg) (Max) @ Vgs :
- 36nC @ 10V
- Drain to Source Voltage (Vdss) :
- 100V
- Terminal Position :
- Single
- Mounting Type :
- Surface Mount
- Qualification Status :
- Not Qualified
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Drive Voltage (Max Rds On,Min Rds On) :
- 6V 10V
- Avalanche Energy Rating (Eas) :
- 73 mJ
- Packaging :
- Tape and Reel (TR)
- Terminal Form :
- Gull wing
- Operating Temperature :
- -55°C~175°C TJ
- Operating Mode :
- ENHANCEMENT MODE
- Datasheets
- FDD3672-F085

N-Channel Tape & Reel (TR) 47m Ω @ 21A, 6V ±20V 1635pF @ 25V 36nC @ 10V 100V TO-252-3, DPak (2 Leads + Tab), SC-63
FDD3672-F085 Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 73 mJ.A device's maximal input capacitance is 1635pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.In this device, the drain current is 44A, which is the maximum continuous current the device can conduct.To maintain normal operation, it is recommended that the DS breakdown voltage be above 100V.This transistor requires a 100V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (6V 10V).
FDD3672-F085 Features
the avalanche energy rating (Eas) is 73 mJ
a 100V drain to source voltage (Vdss)
FDD3672-F085 Applications
There are a lot of ON Semiconductor
FDD3672-F085 applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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