FDD3670
- Mfr.Part #
- FDD3670
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- POWER FIELD-EFFECT TRANSISTOR, 3
- Stock
- 20,478
- In Stock :
- 20,478
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Voltage - Rated DC :
- 100V
- Height :
- 2.39mm
- ECCN Code :
- EAR99
- Vgs (Max) :
- ±20V
- RoHS Status :
- ROHS3 Compliant
- Factory Lead Time :
- 8 Weeks
- Turn On Delay Time :
- 16 ns
- Continuous Drain Current (ID) :
- 34A
- Transistor Element Material :
- SILICON
- Operating Mode :
- ENHANCEMENT MODE
- Series :
- PowerTrench®
- Fall Time (Typ) :
- 25 ns
- Mounting Type :
- Surface Mount
- Terminal Finish :
- Tin (Sn)
- Case Connection :
- DRAIN
- Turn-Off Delay Time :
- 56 ns
- Number of Pins :
- 3
- Operating Temperature :
- -55°C~175°C TJ
- Gate Charge (Qg) (Max) @ Vgs :
- 80nC @ 10V
- Rise Time :
- 10ns
- JESD-609 Code :
- e3
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Drive Voltage (Max Rds On,Min Rds On) :
- 6V 10V
- Number of Elements :
- 1
- Length :
- 6.73mm
- Packaging :
- Tape and Reel (TR)
- FET Type :
- N-Channel
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Application :
- SWITCHING
- Number of Terminations :
- 2
- JESD-30 Code :
- R-PSSO-G2
- Width :
- 6.22mm
- Threshold Voltage :
- 2.5V
- Pbfree Code :
- yes
- Rds On (Max) @ Id, Vgs :
- 32m Ω @ 7.3A, 10V
- REACH SVHC :
- No SVHC
- Lead Free :
- Lead Free
- Gate to Source Voltage (Vgs) :
- 20V
- Radiation Hardening :
- No
- Current Rating :
- 34A
- Resistance :
- 32mOhm
- Weight :
- 260.37mg
- Power Dissipation-Max :
- 3.8W Ta 83W Tc
- Mount :
- Surface Mount
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Drain to Source Breakdown Voltage :
- 100V
- Input Capacitance (Ciss) (Max) @ Vds :
- 2490pF @ 50V
- Current - Continuous Drain (Id) @ 25°C :
- 34A Ta
- Element Configuration :
- Single
- Power Dissipation :
- 83W
- Lifecycle Status :
- ACTIVE (Last Updated: 1 week ago)
- Terminal Form :
- Gull wing
- Datasheets
- FDD3670

N-Channel Tape & Reel (TR) 32m Ω @ 7.3A, 10V ±20V 2490pF @ 50V 80nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63
FDD3670 Description
With either synchronous or traditional switching PWM controllers, this N-Channel MOSFET has been specifically created to increase the overall efficiency of DC/DC converters. When compared to other MOSFETs with comparable RDS(ON) parameters, these MOSFETs have faster switching and a lower gate charge. This leads to MOSFETs that are simpler and safer to drive (even at extremely high frequencies), and more efficient DC/DC power supply solutions.
FDD3670 Features
-
Low gate charge (57 nC typical)
-
Fast switching speed
-
High performance trench technology for extremely
-
low RDS(ON)
-
High power and current handling capability
FDD3670 Applications
-
Power Management
-
Consumer Electronics
-
Portable Devices
-
Industrial
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