FDD26AN06A0

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

4V @ 250µA

Input Capacitance (Ciss) (Max) @ Vds :

800pF @ 25V

Power Dissipation-Max :

75W Tc

Series :

PowerTrench®

RoHS Status :

ROHS3 Compliant

Pbfree Code :

yes

FET Type :

N-Channel

Peak Reflow Temperature (Cel) :

260

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

17nC @ 10V

Current - Continuous Drain (Id) @ 25°C :

7A Ta 36A Tc

Rds On (Max) @ Id, Vgs :

26m Ω @ 36A, 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

DS Breakdown Voltage-Min :

60V

Number of Terminations :

2

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Avalanche Energy Rating (Eas) :

35 mJ

Case Connection :

DRAIN

Vgs (Max) :

±20V

Terminal Finish :

MATTE TIN

Pin Count :

3

Terminal Position :

Single

Terminal Form :

Gull wing

JESD-30 Code :

R-PSSO-G2

Transistor Application :

SWITCHING

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Surface Mount

Packaging :

Tape and Reel (TR)

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Surface Mount :

yes

Configuration :

SINGLE WITH BUILT-IN DIODE

Qualification Status :

COMMERCIAL

JESD-609 Code :

e3

Drain-source On Resistance-Max :

0.058Ohm

Number of Elements :

1

Operating Temperature :

-55°C~175°C TJ

Drain to Source Voltage (Vdss) :

60V

JEDEC-95 Code :

TO-252AA

Drain Current-Max (Abs) (ID) :

7A