FDD24AN06LA0

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Pbfree Code :

yes

Power Dissipation-Max :

75W Tc

Avalanche Energy Rating (Eas) :

32 mJ

FET Type :

N-Channel

Transistor Element Material :

SILICON

JESD-609 Code :

e3

Configuration :

SINGLE WITH BUILT-IN DIODE

Peak Reflow Temperature (Cel) :

260

Pin Count :

4

Vgs(th) (Max) @ Id :

2V @ 250μA

Drain Current-Max (Abs) (ID) :

7.1A

Reach Compliance Code :

Unknown

Number of Elements :

1

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Terminations :

2

JESD-30 Code :

R-PSSO-G2

Mounting Type :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

7.1A Ta 40A Tc

Terminal Finish :

MATTE TIN

DS Breakdown Voltage-Min :

60V

Drain to Source Voltage (Vdss) :

60V

Input Capacitance (Ciss) (Max) @ Vds :

1.85pF @ 25V

Terminal Form :

Gull wing

Surface Mount :

yes

Operating Temperature :

-55°C~175°C TJ

Gate Charge (Qg) (Max) @ Vgs :

21nC @ 5V

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Qualification Status :

COMMERCIAL

Vgs (Max) :

±20V

Packaging :

Tape and Reel (TR)

Case Connection :

DRAIN

Drain-source On Resistance-Max :

0.019Ohm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

19m Ω @ 40A, 10V

Transistor Application :

SWITCHING

Terminal Position :

Single

RoHS Status :

ROHS3 Compliant

Operating Mode :

ENHANCEMENT MODE

JEDEC-95 Code :

TO-252AA

Series :

PowerTrench®

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63