FDD24AN06LA0
- Mfr.Part #
- FDD24AN06LA0
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 7.1A/40A TO252AA
- Stock
- 25,387
- In Stock :
- 25,387
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Avalanche Energy Rating (Eas) :
- 32 mJ
- Gate Charge (Qg) (Max) @ Vgs :
- 21nC @ 5V
- Peak Reflow Temperature (Cel) :
- 260
- Terminal Position :
- Single
- Vgs (Max) :
- ±20V
- Case Connection :
- DRAIN
- Number of Terminations :
- 2
- Qualification Status :
- COMMERCIAL
- Packaging :
- Tape and Reel (TR)
- Operating Temperature :
- -55°C~175°C TJ
- Terminal Finish :
- MATTE TIN
- Power Dissipation-Max :
- 75W Tc
- JEDEC-95 Code :
- TO-252AA
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Drive Voltage (Max Rds On,Min Rds On) :
- 5V 10V
- Number of Elements :
- 1
- Drain-source On Resistance-Max :
- 0.019Ohm
- Drain to Source Voltage (Vdss) :
- 60V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Continuous Drain (Id) @ 25°C :
- 7.1A Ta 40A Tc
- DS Breakdown Voltage-Min :
- 60V
- JESD-609 Code :
- e3
- JESD-30 Code :
- R-PSSO-G2
- Pin Count :
- 4
- Terminal Form :
- Gull wing
- Rds On (Max) @ Id, Vgs :
- 19m Ω @ 40A, 10V
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Surface Mount :
- yes
- FET Type :
- N-Channel
- Drain Current-Max (Abs) (ID) :
- 7.1A
- Operating Mode :
- ENHANCEMENT MODE
- Series :
- PowerTrench®
- Reach Compliance Code :
- Unknown
- Transistor Application :
- SWITCHING
- RoHS Status :
- ROHS3 Compliant
- Input Capacitance (Ciss) (Max) @ Vds :
- 1.85pF @ 25V
- Mounting Type :
- Surface Mount
- Vgs(th) (Max) @ Id :
- 2V @ 250μA
- Transistor Element Material :
- SILICON
- Pbfree Code :
- yes
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Datasheets
- FDD24AN06LA0

N-Channel Tape & Reel (TR) 19m Ω @ 40A, 10V ±20V 1.85pF @ 25V 21nC @ 5V 60V TO-252-3, DPak (2 Leads + Tab), SC-63
FDD24AN06LA0 Overview
Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 32 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 1.85pF @ 25V.7.1A is the drain current of this device, which is the maximum continuous current transistor can carry.To maintain normal operation, the DS breakdown voltage should be kept above 60V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 60V.Using drive voltage (5V 10V) reduces this device's overall power consumption.
FDD24AN06LA0 Features
the avalanche energy rating (Eas) is 32 mJ
a 60V drain to source voltage (Vdss)
FDD24AN06LA0 Applications
There are a lot of Rochester Electronics, LLC
FDD24AN06LA0 applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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