FDD24AN06LA0
- Mfr.Part #
- FDD24AN06LA0
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 7.1A/40A TO252AA
- Stock
- 25,387
- In Stock :
- 25,387
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Operating Mode :
- ENHANCEMENT MODE
- Pin Count :
- 4
- Avalanche Energy Rating (Eas) :
- 32 mJ
- Input Capacitance (Ciss) (Max) @ Vds :
- 1.85pF @ 25V
- Drive Voltage (Max Rds On,Min Rds On) :
- 5V 10V
- Vgs (Max) :
- ±20V
- Case Connection :
- DRAIN
- Surface Mount :
- yes
- Pbfree Code :
- yes
- Power Dissipation-Max :
- 75W Tc
- Rds On (Max) @ Id, Vgs :
- 19m Ω @ 40A, 10V
- Terminal Finish :
- MATTE TIN
- Drain-source On Resistance-Max :
- 0.019Ohm
- Transistor Application :
- SWITCHING
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- DS Breakdown Voltage-Min :
- 60V
- Gate Charge (Qg) (Max) @ Vgs :
- 21nC @ 5V
- Reach Compliance Code :
- Unknown
- JESD-30 Code :
- R-PSSO-G2
- RoHS Status :
- ROHS3 Compliant
- Transistor Element Material :
- SILICON
- Number of Terminations :
- 2
- Operating Temperature :
- -55°C~175°C TJ
- Packaging :
- Tape and Reel (TR)
- Terminal Position :
- Single
- Mounting Type :
- Surface Mount
- Terminal Form :
- Gull wing
- Current - Continuous Drain (Id) @ 25°C :
- 7.1A Ta 40A Tc
- Vgs(th) (Max) @ Id :
- 2V @ 250μA
- Drain Current-Max (Abs) (ID) :
- 7.1A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Peak Reflow Temperature (Cel) :
- 260
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- JEDEC-95 Code :
- TO-252AA
- Drain to Source Voltage (Vdss) :
- 60V
- FET Type :
- N-Channel
- Number of Elements :
- 1
- Qualification Status :
- COMMERCIAL
- JESD-609 Code :
- e3
- Series :
- PowerTrench®
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Datasheets
- FDD24AN06LA0

N-Channel Tape & Reel (TR) 19m Ω @ 40A, 10V ±20V 1.85pF @ 25V 21nC @ 5V 60V TO-252-3, DPak (2 Leads + Tab), SC-63
FDD24AN06LA0 Overview
Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 32 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 1.85pF @ 25V.7.1A is the drain current of this device, which is the maximum continuous current transistor can carry.To maintain normal operation, the DS breakdown voltage should be kept above 60V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 60V.Using drive voltage (5V 10V) reduces this device's overall power consumption.
FDD24AN06LA0 Features
the avalanche energy rating (Eas) is 32 mJ
a 60V drain to source voltage (Vdss)
FDD24AN06LA0 Applications
There are a lot of Rochester Electronics, LLC
FDD24AN06LA0 applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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