FDD2512

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Mfr.Part #
FDD2512
Manufacturer
Fairchild Semiconductor
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet
Download
Description
MOSFET N-CH 150V 6.7A TO252
Stock
2,076
In Stock :
2,076

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Manufacturer :
Fairchild Semiconductor
Product Category :
Transistors - FETs, MOSFETs - Single
Packaging :
Tape and Reel (TR)
Case Connection :
DRAIN
Qualification Status :
COMMERCIAL
Drive Voltage (Max Rds On,Min Rds On) :
6V 10V
Operating Mode :
ENHANCEMENT MODE
Gate Charge (Qg) (Max) @ Vgs :
11nC @ 10V
Pulsed Drain Current-Max (IDM) :
20A
Input Capacitance (Ciss) (Max) @ Vds :
344pF @ 75V
Drain to Source Voltage (Vdss) :
150V
Terminal Finish :
MATTE TIN
Number of Terminations :
2
RoHS Status :
ROHS3 Compliant
Rds On (Max) @ Id, Vgs :
420m Ω @ 2.2A, 10V
Pin Count :
3
Number of Elements :
1
Power Dissipation-Max :
42W Ta
Configuration :
SINGLE WITH BUILT-IN DIODE
Series :
PowerTrench®
DS Breakdown Voltage-Min :
150V
Transistor Application :
SWITCHING
Drain-source On Resistance-Max :
0.42Ohm
JESD-30 Code :
R-PSSO-G2
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Terminal Form :
Gull wing
Vgs (Max) :
±20V
Operating Temperature :
-55°C~175°C TJ
Mounting Type :
Surface Mount
Transistor Element Material :
SILICON
Peak Reflow Temperature (Cel) :
260
JESD-609 Code :
e3
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Terminal Position :
Single
Drain Current-Max (Abs) (ID) :
6.7A
FET Type :
N-Channel
Current - Continuous Drain (Id) @ 25°C :
6.7A Ta
Surface Mount :
yes
Vgs(th) (Max) @ Id :
4V @ 250µA
Pbfree Code :
yes
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
Avalanche Energy Rating (Eas) :
90 mJ
Datasheets
FDD2512
Introducing Transistors - FETs, MOSFETs - Single Fairchild Semiconductor FDD2512 from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:2, Operating Temperature:-55°C~175°C TJ, Mounting Type:Surface Mount, Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63, FDD2512 pinout, FDD2512 datasheet PDF, FDD2512 amp .Beyond Transistors - FETs, MOSFETs - Single Fairchild Semiconductor FDD2512 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Fairchild Semiconductor FDD2512


N-Channel Tape & Reel (TR) 420m Ω @ 2.2A, 10V ±20V 344pF @ 75V 11nC @ 10V 150V TO-252-3, DPak (2 Leads + Tab), SC-63

FDD2512 Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 90 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 344pF @ 75V.There is no drain current on this device since the maximum continuous current it can conduct is 6.7A.There is a peak drain current of 20A, its maximum pulsed drain current.In order for DS breakdown voltage to remain above 150V, it should remain above the 150V level.The transistor must receive a 150V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (6V 10V).

FDD2512 Features


the avalanche energy rating (Eas) is 90 mJ
based on its rated peak drain current 20A.
a 150V drain to source voltage (Vdss)


FDD2512 Applications


There are a lot of Rochester Electronics, LLC
FDD2512 applications of single MOSFETs transistors.


  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
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