FDD2512

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

420m Ω @ 2.2A, 10V

JESD-30 Code :

R-PSSO-G2

Drain Current-Max (Abs) (ID) :

6.7A

Vgs (Max) :

±20V

Case Connection :

DRAIN

Pbfree Code :

yes

Number of Elements :

1

Vgs(th) (Max) @ Id :

4V @ 250µA

Terminal Position :

Single

Terminal Finish :

MATTE TIN

Operating Temperature :

-55°C~175°C TJ

Terminal Form :

Gull wing

Operating Mode :

ENHANCEMENT MODE

Drain to Source Voltage (Vdss) :

150V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Current - Continuous Drain (Id) @ 25°C :

6.7A Ta

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Packaging :

Tape and Reel (TR)

Number of Terminations :

2

Avalanche Energy Rating (Eas) :

90 mJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e3

Transistor Element Material :

SILICON

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Power Dissipation-Max :

42W Ta

Peak Reflow Temperature (Cel) :

260

RoHS Status :

ROHS3 Compliant

Series :

PowerTrench®

Input Capacitance (Ciss) (Max) @ Vds :

344pF @ 75V

Mounting Type :

Surface Mount

Surface Mount :

yes

Drain-source On Resistance-Max :

0.42Ohm

Gate Charge (Qg) (Max) @ Vgs :

11nC @ 10V

Qualification Status :

COMMERCIAL

Pin Count :

3

DS Breakdown Voltage-Min :

150V

Pulsed Drain Current-Max (IDM) :

20A

Transistor Application :

SWITCHING

Configuration :

SINGLE WITH BUILT-IN DIODE

FET Type :

N-Channel