FDD2512

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Form :

Gull wing

Input Capacitance (Ciss) (Max) @ Vds :

344pF @ 75V

Qualification Status :

COMMERCIAL

Transistor Element Material :

SILICON

Terminal Finish :

MATTE TIN

Case Connection :

DRAIN

Peak Reflow Temperature (Cel) :

260

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain to Source Voltage (Vdss) :

150V

Vgs (Max) :

±20V

Number of Elements :

1

Terminal Position :

Single

Series :

PowerTrench®

Operating Temperature :

-55°C~175°C TJ

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

JESD-609 Code :

e3

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Vgs(th) (Max) @ Id :

4V @ 250µA

DS Breakdown Voltage-Min :

150V

Drain Current-Max (Abs) (ID) :

6.7A

Pbfree Code :

yes

Avalanche Energy Rating (Eas) :

90 mJ

Drain-source On Resistance-Max :

0.42Ohm

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

11nC @ 10V

Current - Continuous Drain (Id) @ 25°C :

6.7A Ta

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-30 Code :

R-PSSO-G2

Number of Terminations :

2

Transistor Application :

SWITCHING

Pulsed Drain Current-Max (IDM) :

20A

Rds On (Max) @ Id, Vgs :

420m Ω @ 2.2A, 10V

Surface Mount :

yes

Power Dissipation-Max :

42W Ta

Packaging :

Tape and Reel (TR)

Pin Count :

3

Mounting Type :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

RoHS Status :

ROHS3 Compliant