FDD20AN06A0

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Mfr.Part #
FDD20AN06A0
Manufacturer
onsemi
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet
Download
Description
MOSFET N-CH 60V 8A/45A TO252AA
Stock
10,927
In Stock :
10,927

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Rds On (Max) @ Id, Vgs :
20m Ω @ 45A, 10V
Drain-source On Resistance-Max :
0.02Ohm
FET Type :
N-Channel
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
RoHS Status :
ROHS3 Compliant
Avalanche Energy Rating (Eas) :
50 mJ
Number of Elements :
1
Terminal Form :
Gull wing
Mounting Type :
Surface Mount
Transistor Element Material :
SILICON
Gate Charge (Qg) (Max) @ Vgs :
19nC @ 10V
Series :
PowerTrench®
Configuration :
SINGLE WITH BUILT-IN DIODE
Drain to Source Voltage (Vdss) :
60V
Number of Terminations :
2
Surface Mount :
yes
Pin Count :
4
JEDEC-95 Code :
TO-252AA
Terminal Position :
Single
Power Dissipation-Max :
90W Tc
Drive Voltage (Max Rds On,Min Rds On) :
10V
Packaging :
Tape and Reel (TR)
JESD-609 Code :
e3
Peak Reflow Temperature (Cel) :
260
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
JESD-30 Code :
R-PSSO-G2
Qualification Status :
COMMERCIAL
Drain Current-Max (Abs) (ID) :
8A
Input Capacitance (Ciss) (Max) @ Vds :
950pF @ 25V
DS Breakdown Voltage-Min :
60V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Vgs(th) (Max) @ Id :
4V @ 250µA
Terminal Finish :
MATTE TIN
Current - Continuous Drain (Id) @ 25°C :
8A Ta 45A Tc
Case Connection :
DRAIN
Pbfree Code :
yes
Operating Mode :
ENHANCEMENT MODE
Transistor Application :
SWITCHING
Operating Temperature :
-55°C~175°C TJ
Vgs (Max) :
±20V
Introducing Transistors - FETs, MOSFETs - Single onsemi FDD20AN06A0 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Number of Terminations:2, Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63, Operating Temperature:-55°C~175°C TJ, FDD20AN06A0 pinout, FDD20AN06A0 datasheet PDF, FDD20AN06A0 amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FDD20AN06A0 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FDD20AN06A0


N-Channel Tape & Reel (TR) 20m Ω @ 45A, 10V ±20V 950pF @ 25V 19nC @ 10V 60V TO-252-3, DPak (2 Leads + Tab), SC-63

FDD20AN06A0 Overview


The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 50 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 950pF @ 25V is its maximum input capacitance.Drain current refers to the maximum continuous current a device can conduct, and it is 8A.Normal operation requires that the DS breakdown voltage remain above 60V.For this transistor to work, a voltage 60V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.

FDD20AN06A0 Features


the avalanche energy rating (Eas) is 50 mJ
a 60V drain to source voltage (Vdss)


FDD20AN06A0 Applications


There are a lot of Rochester Electronics, LLC
FDD20AN06A0 applications of single MOSFETs transistors.


  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
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