FDD20AN06A0

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Mfr.Part #
FDD20AN06A0
Manufacturer
onsemi
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet
Download
Description
MOSFET N-CH 60V 8A/45A TO252AA
Stock
10,927
In Stock :
10,927

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Case Connection :
DRAIN
JEDEC-95 Code :
TO-252AA
DS Breakdown Voltage-Min :
60V
Drive Voltage (Max Rds On,Min Rds On) :
10V
Input Capacitance (Ciss) (Max) @ Vds :
950pF @ 25V
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Drain to Source Voltage (Vdss) :
60V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Terminal Form :
Gull wing
Configuration :
SINGLE WITH BUILT-IN DIODE
Avalanche Energy Rating (Eas) :
50 mJ
Series :
PowerTrench®
Number of Terminations :
2
Mounting Type :
Surface Mount
Terminal Finish :
MATTE TIN
Pbfree Code :
yes
Gate Charge (Qg) (Max) @ Vgs :
19nC @ 10V
Surface Mount :
yes
Vgs(th) (Max) @ Id :
4V @ 250µA
Transistor Element Material :
SILICON
Drain Current-Max (Abs) (ID) :
8A
Power Dissipation-Max :
90W Tc
Drain-source On Resistance-Max :
0.02Ohm
Operating Temperature :
-55°C~175°C TJ
Number of Elements :
1
Operating Mode :
ENHANCEMENT MODE
JESD-30 Code :
R-PSSO-G2
Pin Count :
4
RoHS Status :
ROHS3 Compliant
Packaging :
Tape and Reel (TR)
Peak Reflow Temperature (Cel) :
260
Rds On (Max) @ Id, Vgs :
20m Ω @ 45A, 10V
Transistor Application :
SWITCHING
FET Type :
N-Channel
Terminal Position :
Single
Current - Continuous Drain (Id) @ 25°C :
8A Ta 45A Tc
JESD-609 Code :
e3
Vgs (Max) :
±20V
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
Qualification Status :
COMMERCIAL
Introducing Transistors - FETs, MOSFETs - Single onsemi FDD20AN06A0 from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:2, Mounting Type:Surface Mount, Operating Temperature:-55°C~175°C TJ, Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63, FDD20AN06A0 pinout, FDD20AN06A0 datasheet PDF, FDD20AN06A0 amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FDD20AN06A0 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FDD20AN06A0


N-Channel Tape & Reel (TR) 20m Ω @ 45A, 10V ±20V 950pF @ 25V 19nC @ 10V 60V TO-252-3, DPak (2 Leads + Tab), SC-63

FDD20AN06A0 Overview


The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 50 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 950pF @ 25V is its maximum input capacitance.Drain current refers to the maximum continuous current a device can conduct, and it is 8A.Normal operation requires that the DS breakdown voltage remain above 60V.For this transistor to work, a voltage 60V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.

FDD20AN06A0 Features


the avalanche energy rating (Eas) is 50 mJ
a 60V drain to source voltage (Vdss)


FDD20AN06A0 Applications


There are a lot of Rochester Electronics, LLC
FDD20AN06A0 applications of single MOSFETs transistors.


  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
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