FDD2670

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Mounting Type :

Surface Mount

Transistor Element Material :

SILICON

Element Configuration :

Single

Vgs(th) (Max) @ Id :

4.5V @ 250μA

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Weight :

260.37mg

Width :

6.22mm

Series :

PowerTrench®

Terminal Finish :

Tin (Sn)

Case Connection :

DRAIN

Length :

6.73mm

Turn On Delay Time :

13 ns

JESD-609 Code :

e3

Number of Elements :

1

Mount :

Surface Mount

Factory Lead Time :

4 Weeks

Gate to Source Voltage (Vgs) :

20V

Vgs (Max) :

±20V

Operating Temperature :

-55°C~150°C TJ

Height :

2.39mm

Threshold Voltage :

4V

Terminal Form :

Gull wing

Turn-Off Delay Time :

30 ns

Lead Free :

Lead Free

Number of Pins :

2

Number of Terminations :

2

Current - Continuous Drain (Id) @ 25°C :

3.6A Ta

ECCN Code :

EAR99

Operating Mode :

ENHANCEMENT MODE

Dual Supply Voltage :

200V

Transistor Application :

SWITCHING

Published :

2016

Avalanche Energy Rating (Eas) :

375 mJ

Lifecycle Status :

ACTIVE (Last Updated: 6 days ago)

Drain to Source Breakdown Voltage :

200V

Packaging :

Tape and Reel (TR)

Termination :

SMD/SMT

Rise Time :

8ns

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drive Voltage (Max Rds On,Min Rds On) :

10V

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

43nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

1228pF @ 100V

Radiation Hardening :

No

Current Rating :

3.6A

Fall Time (Typ) :

25 ns

Continuous Drain Current (ID) :

3.6A

Power Dissipation :

70mW

Voltage - Rated DC :

200V

Rds On (Max) @ Id, Vgs :

130m Ω @ 3.6A, 10V

Nominal Vgs :

4 V

Pbfree Code :

yes

REACH SVHC :

No SVHC

Power Dissipation-Max :

3.2W Ta 70W Tc