FDD2670

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

4.5V @ 250μA

Lifecycle Status :

ACTIVE (Last Updated: 6 days ago)

Operating Mode :

ENHANCEMENT MODE

Radiation Hardening :

No

Termination :

SMD/SMT

Continuous Drain Current (ID) :

3.6A

Number of Terminations :

2

Power Dissipation-Max :

3.2W Ta 70W Tc

Turn-Off Delay Time :

30 ns

Packaging :

Tape and Reel (TR)

Dual Supply Voltage :

200V

Mounting Type :

Surface Mount

FET Type :

N-Channel

Transistor Application :

SWITCHING

Threshold Voltage :

4V

Fall Time (Typ) :

25 ns

Height :

2.39mm

Rds On (Max) @ Id, Vgs :

130m Ω @ 3.6A, 10V

Input Capacitance (Ciss) (Max) @ Vds :

1228pF @ 100V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

JESD-609 Code :

e3

Number of Pins :

2

RoHS Status :

ROHS3 Compliant

Length :

6.73mm

Current - Continuous Drain (Id) @ 25°C :

3.6A Ta

Series :

PowerTrench®

Turn On Delay Time :

13 ns

REACH SVHC :

No SVHC

Lead Free :

Lead Free

Current Rating :

3.6A

Gate to Source Voltage (Vgs) :

20V

Drain to Source Breakdown Voltage :

200V

Case Connection :

DRAIN

Power Dissipation :

70mW

Number of Elements :

1

Weight :

260.37mg

Mount :

Surface Mount

Voltage - Rated DC :

200V

Element Configuration :

Single

Gate Charge (Qg) (Max) @ Vgs :

43nC @ 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Form :

Gull wing

Drive Voltage (Max Rds On,Min Rds On) :

10V

Factory Lead Time :

4 Weeks

Nominal Vgs :

4 V

Published :

2016

Width :

6.22mm

ECCN Code :

EAR99

Pbfree Code :

yes

Vgs (Max) :

±20V

Rise Time :

8ns

Avalanche Energy Rating (Eas) :

375 mJ

Transistor Element Material :

SILICON

Operating Temperature :

-55°C~150°C TJ

Terminal Finish :

Tin (Sn)