FDD18N20LZ

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Factory Lead Time :

4 Weeks

Gate to Source Voltage (Vgs) :

20V

JESD-609 Code :

e3

Mounting Type :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

40nC @ 10V

Pbfree Code :

yes

Turn-Off Delay Time :

135 ns

Packaging :

Tape and Reel (TR)

Number of Elements :

1

FET Type :

N-Channel

Transistor Application :

SWITCHING

Published :

2013

RoHS Status :

ROHS3 Compliant

Power Dissipation-Max :

89W Tc

Operating Temperature :

-55°C~150°C TJ

Number of Terminations :

2

Case Connection :

DRAIN

Vgs (Max) :

±20V

Turn On Delay Time :

15 ns

Operating Mode :

ENHANCEMENT MODE

JESD-30 Code :

R-PSSO-G2

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Series :

UniFET™

Fall Time (Typ) :

50 ns

Lead Free :

Lead Free

Mount :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

16A Tc

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

ECCN Code :

EAR99

Input Capacitance (Ciss) (Max) @ Vds :

1575pF @ 25V

Width :

6.22mm

Length :

6.73mm

Weight :

260.37mg

Pulsed Drain Current-Max (IDM) :

64A

Power Dissipation :

89W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Rise Time :

20ns

Height :

2.39mm

Lifecycle Status :

ACTIVE (Last Updated: 6 days ago)

Drain to Source Breakdown Voltage :

200V

Rds On (Max) @ Id, Vgs :

125m Ω @ 8A, 10V

Resistance :

125mOhm

JEDEC-95 Code :

TO-252AA

Number of Pins :

3

Element Configuration :

Single

Terminal Form :

Gull wing

Continuous Drain Current (ID) :

16A

Radiation Hardening :

No

Contact Plating :

Tin