FDD18N20LZ

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Element Configuration :

Single

ECCN Code :

EAR99

Weight :

260.37mg

Packaging :

Tape and Reel (TR)

Gate to Source Voltage (Vgs) :

20V

JESD-609 Code :

e3

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Resistance :

125mOhm

Transistor Element Material :

SILICON

Lifecycle Status :

ACTIVE (Last Updated: 6 days ago)

Contact Plating :

Tin

Fall Time (Typ) :

50 ns

Lead Free :

Lead Free

Case Connection :

DRAIN

Published :

2013

Length :

6.73mm

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Rise Time :

20ns

Number of Terminations :

2

Pulsed Drain Current-Max (IDM) :

64A

Radiation Hardening :

No

Factory Lead Time :

4 Weeks

Current - Continuous Drain (Id) @ 25°C :

16A Tc

Operating Temperature :

-55°C~150°C TJ

JESD-30 Code :

R-PSSO-G2

Drain to Source Breakdown Voltage :

200V

Turn-Off Delay Time :

135 ns

Transistor Application :

SWITCHING

Height :

2.39mm

Vgs (Max) :

±20V

Turn On Delay Time :

15 ns

JEDEC-95 Code :

TO-252AA

Series :

UniFET™

Pbfree Code :

yes

Terminal Form :

Gull wing

Mount :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Gate Charge (Qg) (Max) @ Vgs :

40nC @ 10V

Number of Elements :

1

Power Dissipation :

89W

Width :

6.22mm

Operating Mode :

ENHANCEMENT MODE

Rds On (Max) @ Id, Vgs :

125m Ω @ 8A, 10V

Power Dissipation-Max :

89W Tc

FET Type :

N-Channel

Mounting Type :

Surface Mount

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Number of Pins :

3

Input Capacitance (Ciss) (Max) @ Vds :

1575pF @ 25V

Continuous Drain Current (ID) :

16A