FDD14AN06LA0

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

JEDEC-95 Code :

TO-252AA

Current - Continuous Drain (Id) @ 25°C :

9.5A Ta 50A Tc

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Power Dissipation-Max :

125W Tc

Terminal Position :

Single

Number of Elements :

1

Input Capacitance (Ciss) (Max) @ Vds :

2.81pF @ 25V

Drain to Source Voltage (Vdss) :

60V

RoHS Status :

ROHS3 Compliant

DS Breakdown Voltage-Min :

60V

Case Connection :

DRAIN

Gate Charge (Qg) (Max) @ Vgs :

32nC @ 5V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Surface Mount :

yes

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Qualification Status :

COMMERCIAL

Packaging :

Tape and Reel (TR)

Pin Count :

4

Transistor Application :

SWITCHING

Drain Current-Max (Abs) (ID) :

9.5A

Vgs(th) (Max) @ Id :

3V @ 250µA

Number of Terminations :

2

FET Type :

N-Channel

Transistor Element Material :

SILICON

Pbfree Code :

yes

Mounting Type :

Surface Mount

Avalanche Energy Rating (Eas) :

55 mJ

Drain-source On Resistance-Max :

0.015Ohm

Series :

PowerTrench®

Rds On (Max) @ Id, Vgs :

11.6m Ω @ 50A, 10V

JESD-30 Code :

R-PSSO-G2

Terminal Form :

Gull wing

Configuration :

SINGLE WITH BUILT-IN DIODE

Vgs (Max) :

±20V

Terminal Finish :

NOT SPECIFIED

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Operating Mode :

ENHANCEMENT MODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~175°C TJ