FDD14AN06LA0
- Mfr.Part #
- FDD14AN06LA0
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 9.5A/50A TO252AA
- Stock
- 12,679
- In Stock :
- 12,679
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Operating Mode :
- ENHANCEMENT MODE
- Vgs (Max) :
- ±20V
- FET Type :
- N-Channel
- Drain Current-Max (Abs) (ID) :
- 9.5A
- Mounting Type :
- Surface Mount
- Packaging :
- Tape and Reel (TR)
- Pin Count :
- 4
- Terminal Position :
- Single
- Terminal Finish :
- NOT SPECIFIED
- Number of Terminations :
- 2
- DS Breakdown Voltage-Min :
- 60V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Continuous Drain (Id) @ 25°C :
- 9.5A Ta 50A Tc
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Drain-source On Resistance-Max :
- 0.015Ohm
- Terminal Form :
- Gull wing
- Operating Temperature :
- -55°C~175°C TJ
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Drain to Source Voltage (Vdss) :
- 60V
- Series :
- PowerTrench®
- JESD-30 Code :
- R-PSSO-G2
- Gate Charge (Qg) (Max) @ Vgs :
- 32nC @ 5V
- Case Connection :
- DRAIN
- Transistor Element Material :
- SILICON
- Input Capacitance (Ciss) (Max) @ Vds :
- 2.81pF @ 25V
- JEDEC-95 Code :
- TO-252AA
- Pbfree Code :
- yes
- Surface Mount :
- yes
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Rds On (Max) @ Id, Vgs :
- 11.6m Ω @ 50A, 10V
- RoHS Status :
- ROHS3 Compliant
- Qualification Status :
- COMMERCIAL
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Transistor Application :
- SWITCHING
- Power Dissipation-Max :
- 125W Tc
- Number of Elements :
- 1
- Avalanche Energy Rating (Eas) :
- 55 mJ
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Drive Voltage (Max Rds On,Min Rds On) :
- 5V 10V
- Datasheets
- FDD14AN06LA0

N-Channel Tape & Reel (TR) 11.6m Ω @ 50A, 10V ±20V 2.81pF @ 25V 32nC @ 5V 60V TO-252-3, DPak (2 Leads + Tab), SC-63
FDD14AN06LA0 Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 55 mJ.A device's maximum input capacitance is 2.81pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its drain current is 9.5A, and it is the maximum continuous current the device can conduct.For normal operation, maintain the DS breakdown voltage above 60V.To operate this transistor, you need to apply a 60V drain to source voltage (Vdss).This device uses no drive voltage (5V 10V) to reduce its overall power consumption.
FDD14AN06LA0 Features
the avalanche energy rating (Eas) is 55 mJ
a 60V drain to source voltage (Vdss)
FDD14AN06LA0 Applications
There are a lot of Rochester Electronics, LLC
FDD14AN06LA0 applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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