FDD10AN06A0

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn On Delay Time :

8 ns

Drain to Source Breakdown Voltage :

60V

Current - Continuous Drain (Id) @ 25°C :

11A Ta 50A Tc

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Width :

6.22mm

Height :

2.39mm

Series :

PowerTrench®

FET Type :

N-Channel

Voltage - Rated DC :

60V

JESD-609 Code :

e3

Continuous Drain Current (ID) :

50A

Number of Pins :

3

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Fall Time (Typ) :

32 ns

Number of Terminations :

2

Element Configuration :

Single

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Lead Free :

Lead Free

Contact Plating :

Tin

Packaging :

Tape and Reel (TR)

Operating Mode :

ENHANCEMENT MODE

Voltage :

60V

Current Rating :

50A

Weight :

4.535924g

Transistor Element Material :

SILICON

Avalanche Energy Rating (Eas) :

429 mJ

Length :

6.73mm

Terminal Form :

Gull wing

Threshold Voltage :

4V

Power Dissipation-Max :

135W Tc

Number of Elements :

1

ECCN Code :

EAR99

Pbfree Code :

yes

Current :

50A

Nominal Vgs :

4 V

Vgs(th) (Max) @ Id :

4V @ 250µA

JEDEC-95 Code :

TO-252AA

Vgs (Max) :

±20V

JESD-30 Code :

R-PSSO-G2

REACH SVHC :

No SVHC

Resistance :

10.5mOhm

Turn-Off Delay Time :

32 ns

RoHS Status :

ROHS3 Compliant

Power Dissipation :

135W

Rds On (Max) @ Id, Vgs :

10.5m Ω @ 50A, 10V

Case Connection :

DRAIN

Mount :

Surface Mount

Radiation Hardening :

No

Factory Lead Time :

8 Weeks

Input Capacitance (Ciss) (Max) @ Vds :

1840pF @ 25V

Transistor Application :

SWITCHING

Mounting Type :

Surface Mount

Rise Time :

79ns

Gate Charge (Qg) (Max) @ Vgs :

37nC @ 10V

Operating Temperature :

-55°C~175°C TJ

Gate to Source Voltage (Vgs) :

20V