FDD10AN06A0

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

4V @ 250µA

Current Rating :

50A

Gate Charge (Qg) (Max) @ Vgs :

37nC @ 10V

JESD-30 Code :

R-PSSO-G2

Weight :

4.535924g

Operating Temperature :

-55°C~175°C TJ

JESD-609 Code :

e3

Resistance :

10.5mOhm

Radiation Hardening :

No

Voltage :

60V

Number of Terminations :

2

Number of Pins :

3

Vgs (Max) :

±20V

Transistor Element Material :

SILICON

Pbfree Code :

yes

Series :

PowerTrench®

Rise Time :

79ns

Turn-Off Delay Time :

32 ns

Turn On Delay Time :

8 ns

Drain to Source Breakdown Voltage :

60V

Case Connection :

DRAIN

Continuous Drain Current (ID) :

50A

JEDEC-95 Code :

TO-252AA

Voltage - Rated DC :

60V

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

135W Tc

RoHS Status :

ROHS3 Compliant

Transistor Application :

SWITCHING

Current :

50A

Threshold Voltage :

4V

Width :

6.22mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

REACH SVHC :

No SVHC

Length :

6.73mm

Gate to Source Voltage (Vgs) :

20V

Rds On (Max) @ Id, Vgs :

10.5m Ω @ 50A, 10V

Power Dissipation :

135W

Packaging :

Tape and Reel (TR)

Input Capacitance (Ciss) (Max) @ Vds :

1840pF @ 25V

Fall Time (Typ) :

32 ns

Mounting Type :

Surface Mount

Terminal Form :

Gull wing

Height :

2.39mm

FET Type :

N-Channel

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Mount :

Surface Mount

Contact Plating :

Tin

Nominal Vgs :

4 V

ECCN Code :

EAR99

Current - Continuous Drain (Id) @ 25°C :

11A Ta 50A Tc

Number of Elements :

1

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Element Configuration :

Single

Factory Lead Time :

8 Weeks

Lead Free :

Lead Free

Avalanche Energy Rating (Eas) :

429 mJ

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)