FDD120AN15A0
- Mfr.Part #
- FDD120AN15A0
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 150V 2.8A/14A DPAK
- Stock
- 29,028
- In Stock :
- 29,028
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Power Dissipation :
- 65W
- Pbfree Code :
- yes
- Mounting Type :
- Surface Mount
- Height :
- 2.39mm
- Turn-Off Delay Time :
- 30 ns
- Lifecycle Status :
- ACTIVE (Last Updated: 6 days ago)
- Drain to Source Breakdown Voltage :
- 150V
- Length :
- 6.73mm
- Drive Voltage (Max Rds On,Min Rds On) :
- 6V 10V
- Threshold Voltage :
- 4V
- Gate to Source Voltage (Vgs) :
- 20V
- Packaging :
- Tape and Reel (TR)
- Drain Current-Max (Abs) (ID) :
- 2.8A
- Number of Elements :
- 1
- ECCN Code :
- EAR99
- RoHS Status :
- ROHS3 Compliant
- Fall Time (Typ) :
- 19 ns
- Power Dissipation-Max :
- 65W Tc
- FET Type :
- N-Channel
- JESD-609 Code :
- e3
- JEDEC-95 Code :
- TO-252AA
- Weight :
- 260.37mg
- Turn On Delay Time :
- 6 ns
- Continuous Drain Current (ID) :
- 14A
- Transistor Element Material :
- SILICON
- Operating Temperature :
- -55°C~175°C TJ
- Factory Lead Time :
- 8 Weeks
- Number of Pins :
- 3
- Vgs (Max) :
- ±20V
- Published :
- 2002
- Contact Plating :
- Tin
- Transistor Application :
- SWITCHING
- Current - Continuous Drain (Id) @ 25°C :
- 2.8A Ta 14A Tc
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Terminal Form :
- Gull wing
- Gate Charge (Qg) (Max) @ Vgs :
- 14.5nC @ 10V
- Rise Time :
- 16ns
- Voltage - Rated DC :
- 150V
- Lead Free :
- Lead Free
- Mount :
- Surface Mount
- Radiation Hardening :
- No
- Case Connection :
- DRAIN
- Operating Mode :
- ENHANCEMENT MODE
- JESD-30 Code :
- R-PSSO-G2
- Current Rating :
- 14A
- Width :
- 6.22mm
- Input Capacitance (Ciss) (Max) @ Vds :
- 770pF @ 25V
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Series :
- PowerTrench®
- Number of Terminations :
- 2
- Element Configuration :
- Single
- Rds On (Max) @ Id, Vgs :
- 120m Ω @ 4A, 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Resistance :
- 120mOhm
- REACH SVHC :
- No SVHC
- Datasheets
- FDD120AN15A0

N-Channel Tape & Reel (TR) 120m Ω @ 4A, 10V ±20V 770pF @ 25V 14.5nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63
FDD120AN15A0 Description
The FDD120AN15A0 is an N-channel MOSFET produced using the PowerTrench? process. The onsemi FDD120AN15A0 is suitable for use in synchronous rectification and micro solar inverter applications due to the following features. The Operating and Storage Temperature Range is between -55 and 175℃. And the Transistor FDD120AN15A0 is in the DPAK-3 package with 65W power dissipation.
FDD120AN15A0 Features
-
RDS(on) = 101m? (Typ.) @ VGS = 10V, ID = 4A
-
QG(tot) = 11.2nC (Typ.) @ VGS = 10V
-
Low Miller Charge
-
Low Qrr Body Diode
-
UIS Capability (Single Pulse and Repetitive Pulse)
FDD120AN15A0 Applications
-
Consumer Appliances
-
LED TV
-
Synchronous Rectification
-
Uninterruptible Power Supply
-
Micro Solar Inverter
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