FDD120AN15A0
- Mfr.Part #
- FDD120AN15A0
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 150V 2.8A/14A DPAK
- Stock
- 29,028
- In Stock :
- 29,028
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Current Rating :
- 14A
- Turn-Off Delay Time :
- 30 ns
- Gate Charge (Qg) (Max) @ Vgs :
- 14.5nC @ 10V
- FET Type :
- N-Channel
- Case Connection :
- DRAIN
- Power Dissipation :
- 65W
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Threshold Voltage :
- 4V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Input Capacitance (Ciss) (Max) @ Vds :
- 770pF @ 25V
- RoHS Status :
- ROHS3 Compliant
- Series :
- PowerTrench®
- Vgs (Max) :
- ±20V
- JESD-609 Code :
- e3
- Continuous Drain Current (ID) :
- 14A
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Transistor Application :
- SWITCHING
- Rise Time :
- 16ns
- Radiation Hardening :
- No
- Lead Free :
- Lead Free
- Lifecycle Status :
- ACTIVE (Last Updated: 6 days ago)
- Operating Temperature :
- -55°C~175°C TJ
- Drive Voltage (Max Rds On,Min Rds On) :
- 6V 10V
- Rds On (Max) @ Id, Vgs :
- 120m Ω @ 4A, 10V
- Mount :
- Surface Mount
- Resistance :
- 120mOhm
- Voltage - Rated DC :
- 150V
- Height :
- 2.39mm
- Published :
- 2002
- Weight :
- 260.37mg
- Width :
- 6.22mm
- ECCN Code :
- EAR99
- Mounting Type :
- Surface Mount
- Factory Lead Time :
- 8 Weeks
- Length :
- 6.73mm
- Gate to Source Voltage (Vgs) :
- 20V
- Drain Current-Max (Abs) (ID) :
- 2.8A
- Number of Elements :
- 1
- Power Dissipation-Max :
- 65W Tc
- JESD-30 Code :
- R-PSSO-G2
- JEDEC-95 Code :
- TO-252AA
- Turn On Delay Time :
- 6 ns
- Number of Pins :
- 3
- Packaging :
- Tape and Reel (TR)
- Drain to Source Breakdown Voltage :
- 150V
- Number of Terminations :
- 2
- Terminal Form :
- Gull wing
- Transistor Element Material :
- SILICON
- Element Configuration :
- Single
- Contact Plating :
- Tin
- Current - Continuous Drain (Id) @ 25°C :
- 2.8A Ta 14A Tc
- REACH SVHC :
- No SVHC
- Operating Mode :
- ENHANCEMENT MODE
- Pbfree Code :
- yes
- Fall Time (Typ) :
- 19 ns
- Datasheets
- FDD120AN15A0

N-Channel Tape & Reel (TR) 120m Ω @ 4A, 10V ±20V 770pF @ 25V 14.5nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63
FDD120AN15A0 Description
The FDD120AN15A0 is an N-channel MOSFET produced using the PowerTrench? process. The onsemi FDD120AN15A0 is suitable for use in synchronous rectification and micro solar inverter applications due to the following features. The Operating and Storage Temperature Range is between -55 and 175℃. And the Transistor FDD120AN15A0 is in the DPAK-3 package with 65W power dissipation.
FDD120AN15A0 Features
-
RDS(on) = 101m? (Typ.) @ VGS = 10V, ID = 4A
-
QG(tot) = 11.2nC (Typ.) @ VGS = 10V
-
Low Miller Charge
-
Low Qrr Body Diode
-
UIS Capability (Single Pulse and Repetitive Pulse)
FDD120AN15A0 Applications
-
Consumer Appliances
-
LED TV
-
Synchronous Rectification
-
Uninterruptible Power Supply
-
Micro Solar Inverter
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