FDD10N20LZTM

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

83W Tc

Rds On (Max) @ Id, Vgs :

360m Ω @ 3.8A, 10V

Series :

UniFET™

Fall Time (Typ) :

25 ns

Number of Pins :

3

Drain to Source Breakdown Voltage :

200V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

ECCN Code :

EAR99

Turn-Off Delay Time :

55 ns

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Transistor Application :

SWITCHING

Radiation Hardening :

No

Pbfree Code :

yes

JESD-30 Code :

R-PSSO-G2

Rise Time :

15ns

Packaging :

Tape and Reel (TR)

Mounting Type :

Surface Mount

Width :

6.22mm

Element Configuration :

Single

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE

JESD-609 Code :

e3

Turn On Delay Time :

10 ns

Input Capacitance (Ciss) (Max) @ Vds :

585pF @ 25V

JEDEC-95 Code :

TO-252AA

Gate Charge (Qg) (Max) @ Vgs :

16nC @ 10V

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Surface Mount

Weight :

260.37mg

Gate to Source Voltage (Vgs) :

20V

FET Type :

N-Channel

Number of Terminations :

2

Length :

6.73mm

Continuous Drain Current (ID) :

7.6A

Case Connection :

DRAIN

Current - Continuous Drain (Id) @ 25°C :

7.6A Tc

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Operating Temperature :

-55°C~150°C TJ

Lifecycle Status :

ACTIVE (Last Updated: 6 days ago)

Power Dissipation :

56W

Terminal Form :

Gull wing

Terminal Finish :

Tin (Sn)

Number of Elements :

1

Factory Lead Time :

11 Weeks

Height :

2.39mm