FDD10N20LZTM

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Form :

Gull wing

Transistor Element Material :

SILICON

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Rds On (Max) @ Id, Vgs :

360m Ω @ 3.8A, 10V

Rise Time :

15ns

Number of Terminations :

2

Series :

UniFET™

Number of Pins :

3

Drain to Source Breakdown Voltage :

200V

Vgs (Max) :

±20V

Width :

6.22mm

Continuous Drain Current (ID) :

7.6A

Factory Lead Time :

11 Weeks

RoHS Status :

ROHS3 Compliant

FET Type :

N-Channel

Operating Mode :

ENHANCEMENT MODE

JESD-609 Code :

e3

Input Capacitance (Ciss) (Max) @ Vds :

585pF @ 25V

Gate Charge (Qg) (Max) @ Vgs :

16nC @ 10V

Power Dissipation-Max :

83W Tc

Turn-Off Delay Time :

55 ns

Height :

2.39mm

Vgs(th) (Max) @ Id :

2.5V @ 250μA

ECCN Code :

EAR99

Case Connection :

DRAIN

Packaging :

Tape and Reel (TR)

Fall Time (Typ) :

25 ns

Mounting Type :

Surface Mount

Lifecycle Status :

ACTIVE (Last Updated: 6 days ago)

Weight :

260.37mg

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Radiation Hardening :

No

Length :

6.73mm

Pbfree Code :

yes

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

JEDEC-95 Code :

TO-252AA

Operating Temperature :

-55°C~150°C TJ

Number of Elements :

1

Current - Continuous Drain (Id) @ 25°C :

7.6A Tc

Gate to Source Voltage (Vgs) :

20V

JESD-30 Code :

R-PSSO-G2

Transistor Application :

SWITCHING

Mount :

Surface Mount

Terminal Finish :

Tin (Sn)

Power Dissipation :

56W

Turn On Delay Time :

10 ns

Element Configuration :

Single