FDD10N20LZTM

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Mfr.Part #
FDD10N20LZTM
Manufacturer
onsemi
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet
Download
Description
MOSFET N-CH 200V 7.6A DPAK
Stock
37
In Stock :
37

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Terminal Form :
Gull wing
Transistor Element Material :
SILICON
Drive Voltage (Max Rds On,Min Rds On) :
5V 10V
Rds On (Max) @ Id, Vgs :
360m Ω @ 3.8A, 10V
Rise Time :
15ns
Number of Terminations :
2
Series :
UniFET™
Number of Pins :
3
Drain to Source Breakdown Voltage :
200V
Vgs (Max) :
±20V
Width :
6.22mm
Continuous Drain Current (ID) :
7.6A
Factory Lead Time :
11 Weeks
RoHS Status :
ROHS3 Compliant
FET Type :
N-Channel
Operating Mode :
ENHANCEMENT MODE
JESD-609 Code :
e3
Input Capacitance (Ciss) (Max) @ Vds :
585pF @ 25V
Gate Charge (Qg) (Max) @ Vgs :
16nC @ 10V
Power Dissipation-Max :
83W Tc
Turn-Off Delay Time :
55 ns
Height :
2.39mm
Vgs(th) (Max) @ Id :
2.5V @ 250μA
ECCN Code :
EAR99
Case Connection :
DRAIN
Packaging :
Tape and Reel (TR)
Fall Time (Typ) :
25 ns
Mounting Type :
Surface Mount
Lifecycle Status :
ACTIVE (Last Updated: 6 days ago)
Weight :
260.37mg
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Radiation Hardening :
No
Length :
6.73mm
Pbfree Code :
yes
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
JEDEC-95 Code :
TO-252AA
Operating Temperature :
-55°C~150°C TJ
Number of Elements :
1
Current - Continuous Drain (Id) @ 25°C :
7.6A Tc
Gate to Source Voltage (Vgs) :
20V
JESD-30 Code :
R-PSSO-G2
Transistor Application :
SWITCHING
Mount :
Surface Mount
Terminal Finish :
Tin (Sn)
Power Dissipation :
56W
Turn On Delay Time :
10 ns
Element Configuration :
Single
Datasheets
FDD10N20LZTM
Introducing Transistors - FETs, MOSFETs - Single onsemi FDD10N20LZTM from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:2, Number of Pins:3, Mounting Type:Surface Mount, Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63, Operating Temperature:-55°C~150°C TJ, FDD10N20LZTM pinout, FDD10N20LZTM datasheet PDF, FDD10N20LZTM amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FDD10N20LZTM ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FDD10N20LZTM


N-Channel Tape & Reel (TR) 360m Ω @ 3.8A, 10V ±20V 585pF @ 25V 16nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63

FDD10N20LZTM Description

UniFETTM MOSFET is a high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX, and electronic lamp ballasts.



FDD10N20LZTM Features

RDS(on) = 300m? ( Typ.)@ VGS = 10V, ID = 3.8A

Low gate charge ( Typ. 12nC)

Low Crss ( Typ. 11pF)

100% avalanche tested

Improved dv/dt capability

ESD improved capability

RoHS compliant



FDD10N20LZTM Applications

This product is general usage and suitable for many different applications.



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