FDD16AN08A0

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance (Ciss) (Max) @ Vds :

1874pF @ 25V

Pbfree Code :

yes

Avalanche Energy Rating (Eas) :

95 mJ

Vgs(th) (Max) @ Id :

4V @ 250µA

Power Dissipation-Max :

135W Tc

JESD-30 Code :

R-PSSO-G2

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

REACH SVHC :

No SVHC

Number of Terminations :

2

Weight :

260.37mg

Published :

2013

Turn-Off Delay Time :

32 ns

Rds On (Max) @ Id, Vgs :

16m Ω @ 50A, 10V

Drain to Source Breakdown Voltage :

75V

RoHS Status :

ROHS3 Compliant

JESD-609 Code :

e3

Terminal Form :

Gull wing

FET Type :

N-Channel

Length :

6.73mm

Gate Charge (Qg) (Max) @ Vgs :

47nC @ 10V

JEDEC-95 Code :

TO-252AA

Rise Time :

54ns

Transistor Application :

SWITCHING

Element Configuration :

Single

Factory Lead Time :

8 Weeks

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

9A Ta 50A Tc

Packaging :

Tape and Reel (TR)

Series :

UltraFET™

Current Rating :

50A

Lead Free :

Lead Free

Threshold Voltage :

4V

Vgs (Max) :

±20V

Number of Pins :

3

Width :

6.22mm

Mounting Type :

Surface Mount

Voltage - Rated DC :

75V

Drain Current-Max (Abs) (ID) :

9A

Radiation Hardening :

No

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Turn On Delay Time :

8 ns

Contact Plating :

Tin

Operating Mode :

ENHANCEMENT MODE

Case Connection :

DRAIN

Mount :

Surface Mount

Height :

2.39mm

Continuous Drain Current (ID) :

50A

Fall Time (Typ) :

22 ns

Resistance :

16mOhm

Power Dissipation :

135W

ECCN Code :

EAR99

Lifecycle Status :

ACTIVE (Last Updated: 6 days ago)

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate to Source Voltage (Vgs) :

20V

Operating Temperature :

-55°C~175°C TJ