FDD16AN08A0
- Mfr.Part #
- FDD16AN08A0
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 75V 9A/50A DPAK
- Stock
- 5,975
- In Stock :
- 5,975
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- ECCN Code :
- EAR99
- Pbfree Code :
- yes
- Case Connection :
- DRAIN
- Turn On Delay Time :
- 8 ns
- Resistance :
- 16mOhm
- Weight :
- 260.37mg
- JESD-609 Code :
- e3
- REACH SVHC :
- No SVHC
- Rds On (Max) @ Id, Vgs :
- 16m Ω @ 50A, 10V
- Gate Charge (Qg) (Max) @ Vgs :
- 47nC @ 10V
- Rise Time :
- 54ns
- Threshold Voltage :
- 4V
- Width :
- 6.22mm
- Lifecycle Status :
- ACTIVE (Last Updated: 6 days ago)
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Application :
- SWITCHING
- Gate to Source Voltage (Vgs) :
- 20V
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- JESD-30 Code :
- R-PSSO-G2
- Terminal Form :
- Gull wing
- Number of Elements :
- 1
- Packaging :
- Tape and Reel (TR)
- Mounting Type :
- Surface Mount
- Operating Mode :
- ENHANCEMENT MODE
- Drain to Source Breakdown Voltage :
- 75V
- Input Capacitance (Ciss) (Max) @ Vds :
- 1874pF @ 25V
- Drain Current-Max (Abs) (ID) :
- 9A
- Avalanche Energy Rating (Eas) :
- 95 mJ
- Height :
- 2.39mm
- JEDEC-95 Code :
- TO-252AA
- Fall Time (Typ) :
- 22 ns
- RoHS Status :
- ROHS3 Compliant
- Length :
- 6.73mm
- Factory Lead Time :
- 8 Weeks
- Published :
- 2013
- Power Dissipation :
- 135W
- FET Type :
- N-Channel
- Vgs (Max) :
- ±20V
- Mount :
- Surface Mount
- Operating Temperature :
- -55°C~175°C TJ
- Element Configuration :
- Single
- Current Rating :
- 50A
- Continuous Drain Current (ID) :
- 50A
- Transistor Element Material :
- SILICON
- Drive Voltage (Max Rds On,Min Rds On) :
- 6V 10V
- Contact Plating :
- Tin
- Voltage - Rated DC :
- 75V
- Lead Free :
- Lead Free
- Series :
- UltraFET™
- Turn-Off Delay Time :
- 32 ns
- Power Dissipation-Max :
- 135W Tc
- Number of Pins :
- 3
- Radiation Hardening :
- No
- Current - Continuous Drain (Id) @ 25°C :
- 9A Ta 50A Tc
- Number of Terminations :
- 2
- Datasheets
- FDD16AN08A0

N-Channel Tape & Reel (TR) 16m Ω @ 50A, 10V ±20V 1874pF @ 25V 47nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63
FDD16AN08A0 Description
FDD16AN08A0 belongs to the family of N-channel PowerTrench? MOSFETs manufactured by ON Semiconductor that is designed based on advanced and high-performance trench technology. It is used by electronic designers to minimize the on-state resistance and maintain a fast switching speed at the same time. Due to its high quality and reliable performance, FDD16AN08A0 MOSFET is widely used for motor drives and uninterruptible power supplies, synchronous rectification, and more.
FDD16AN08A0 Features
-
Advanced PowerTrench? process
-
Low on-state resistance
-
Low gate charge
-
Superior switching performance
-
Available in the D-PAK package
FDD16AN08A0 Applications
-
Synchronous rectification
-
Motor drives
-
Uninterruptible power supplies
-
Battery protection circuit
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