FDD16AN08A0
- Mfr.Part #
- FDD16AN08A0
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- POWER FIELD-EFFECT TRANSISTOR, 9
- Stock
- 5,975
- In Stock :
- 5,975
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- ECCN Code :
- EAR99
- Number of Pins :
- 3
- Width :
- 6.22mm
- Current Rating :
- 50A
- JEDEC-95 Code :
- TO-252AA
- JESD-609 Code :
- e3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Contact Plating :
- Tin
- Number of Elements :
- 1
- Terminal Form :
- Gull wing
- Drain to Source Breakdown Voltage :
- 75V
- RoHS Status :
- ROHS3 Compliant
- Operating Temperature :
- -55°C~175°C TJ
- Radiation Hardening :
- No
- Gate to Source Voltage (Vgs) :
- 20V
- Pbfree Code :
- yes
- Factory Lead Time :
- 8 Weeks
- JESD-30 Code :
- R-PSSO-G2
- Power Dissipation :
- 135W
- Gate Charge (Qg) (Max) @ Vgs :
- 47nC @ 10V
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Voltage - Rated DC :
- 75V
- Length :
- 6.73mm
- Turn-Off Delay Time :
- 32 ns
- Case Connection :
- DRAIN
- Element Configuration :
- Single
- Weight :
- 260.37mg
- Mounting Type :
- Surface Mount
- Lead Free :
- Lead Free
- Transistor Element Material :
- SILICON
- Drive Voltage (Max Rds On,Min Rds On) :
- 6V 10V
- Number of Terminations :
- 2
- Turn On Delay Time :
- 8 ns
- Published :
- 2013
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Transistor Application :
- SWITCHING
- Input Capacitance (Ciss) (Max) @ Vds :
- 1874pF @ 25V
- Vgs (Max) :
- ±20V
- Mount :
- Surface Mount
- Rise Time :
- 54ns
- Fall Time (Typ) :
- 22 ns
- Power Dissipation-Max :
- 135W Tc
- Current - Continuous Drain (Id) @ 25°C :
- 9A Ta 50A Tc
- FET Type :
- N-Channel
- Continuous Drain Current (ID) :
- 50A
- Series :
- UltraFET™
- Lifecycle Status :
- ACTIVE (Last Updated: 6 days ago)
- Threshold Voltage :
- 4V
- Avalanche Energy Rating (Eas) :
- 95 mJ
- Resistance :
- 16mOhm
- Rds On (Max) @ Id, Vgs :
- 16m Ω @ 50A, 10V
- Packaging :
- Tape and Reel (TR)
- Height :
- 2.39mm
- Operating Mode :
- ENHANCEMENT MODE
- REACH SVHC :
- No SVHC
- Drain Current-Max (Abs) (ID) :
- 9A
- Datasheets
- FDD16AN08A0

N-Channel Tape & Reel (TR) 16m Ω @ 50A, 10V ±20V 1874pF @ 25V 47nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63
FDD16AN08A0 Description
FDD16AN08A0 belongs to the family of N-channel PowerTrench? MOSFETs manufactured by ON Semiconductor that is designed based on advanced and high-performance trench technology. It is used by electronic designers to minimize the on-state resistance and maintain a fast switching speed at the same time. Due to its high quality and reliable performance, FDD16AN08A0 MOSFET is widely used for motor drives and uninterruptible power supplies, synchronous rectification, and more.
FDD16AN08A0 Features
-
Advanced PowerTrench? process
-
Low on-state resistance
-
Low gate charge
-
Superior switching performance
-
Available in the D-PAK package
FDD16AN08A0 Applications
-
Synchronous rectification
-
Motor drives
-
Uninterruptible power supplies
-
Battery protection circuit
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