FDB088N08

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Application :

SWITCHING

Number of Pins :

3

Drain-source On Resistance-Max :

0.0088Ohm

Length :

10.67mm

Number of Elements :

1

Drive Voltage (Max Rds On,Min Rds On) :

10V

FET Type :

N-Channel

Terminal Finish :

Tin (Sn)

Fall Time (Typ) :

102 ns

Vgs (Max) :

±20V

Gate Charge (Qg) (Max) @ Vgs :

118nC @ 10V

Weight :

1.31247g

Power Dissipation :

160W

Terminal Form :

Gull wing

Gate to Source Voltage (Vgs) :

20V

Packaging :

Tape and Reel (TR)

Mount :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

120A Tc

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

JESD-30 Code :

R-PSSO-G2

Drain Current-Max (Abs) (ID) :

85A

Turn On Delay Time :

45 ns

Input Capacitance (Ciss) (Max) @ Vds :

6595pF @ 25V

Published :

2004

Mounting Type :

Surface Mount

Continuous Drain Current (ID) :

120A

Series :

PowerTrench®

Rds On (Max) @ Id, Vgs :

8.8m Ω @ 75A, 10V

Radiation Hardening :

No

RoHS Status :

ROHS3 Compliant

Vgs(th) (Max) @ Id :

4V @ 250µA

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

ECCN Code :

EAR99

Width :

11.33mm

Transistor Element Material :

SILICON

Number of Terminations :

2

Operating Mode :

ENHANCEMENT MODE

Threshold Voltage :

2V

Rise Time :

158ns

Height :

4.83mm

Pbfree Code :

yes

Drain to Source Breakdown Voltage :

75V

Element Configuration :

Single

Power Dissipation-Max :

160W Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

REACH SVHC :

No SVHC

JESD-609 Code :

e3

Case Connection :

DRAIN

Turn-Off Delay Time :

244 ns

Operating Temperature :

-55°C~175°C TJ

Factory Lead Time :

8 Weeks