FDB016N04AL7

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Weight :

1.312g

Turn-Off Delay Time :

118 ns

Gate Charge (Qg) (Max) @ Vgs :

167nC @ 10V

Element Configuration :

Single

Mount :

Surface Mount

Width :

9.4mm

Vgs(th) (Max) @ Id :

3V @ 250µA

Terminal Finish :

Tin (Sn)

Additional Feature :

ULTRA-LOW RESISTANCE

Transistor Element Material :

SILICON

Number of Pins :

7

RoHS Status :

ROHS3 Compliant

Package / Case :

TO-263-7, D2Pak (6 Leads + Tab)

Case Connection :

DRAIN

Continuous Drain Current (ID) :

160A

Series :

PowerTrench®

Length :

10.2mm

Mounting Type :

Surface Mount

Lifecycle Status :

ACTIVE (Last Updated: 1 week ago)

Current - Continuous Drain (Id) @ 25°C :

160A Tc

Transistor Application :

SWITCHING

Terminal Form :

Gull wing

Gate to Source Voltage (Vgs) :

20V

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

1

JESD-609 Code :

e3

Turn On Delay Time :

21 ns

JESD-30 Code :

R-PSSO-G6

Published :

2014

Height :

4.7mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

Pbfree Code :

yes

Power Dissipation-Max :

283W Tc

Rds On (Max) @ Id, Vgs :

1.6m Ω @ 80A, 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

FET Type :

N-Channel

Power Dissipation :

283W

Number of Terminations :

6

Factory Lead Time :

16 Weeks

Rise Time :

14ns

Operating Temperature :

-55°C~175°C TJ

Vgs (Max) :

±20V

Drain to Source Breakdown Voltage :

40V

Packaging :

Tape and Reel (TR)

Radiation Hardening :

No

Fall Time (Typ) :

33 ns

Input Capacitance (Ciss) (Max) @ Vds :

11600pF @ 25V