FDB024N04AL7

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-609 Code :

e3

Width :

4.3mm

Drain to Source Breakdown Voltage :

40V

Current - Continuous Drain (Id) @ 25°C :

100A Tc

Operating Temperature :

-55°C~175°C TJ

Case Connection :

DRAIN

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

7300pF @ 25V

Additional Feature :

ULTRA-LOW RESISTANCE

Vgs(th) (Max) @ Id :

3V @ 250µA

RoHS Status :

ROHS3 Compliant

Package / Case :

TO-263-7, D2Pak (6 Leads + Tab)

Factory Lead Time :

16 Weeks

Drive Voltage (Max Rds On,Min Rds On) :

10V

Radiation Hardening :

No

Continuous Drain Current (ID) :

219A

Mount :

Surface Mount

Pbfree Code :

yes

Turn On Delay Time :

17 ns

Power Dissipation-Max :

214W Tc

JESD-30 Code :

R-PSSO-G6

Terminal Finish :

Tin (Sn)

Rise Time :

8ns

Number of Elements :

1

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

6

Terminal Form :

Gull wing

Packaging :

Tape and Reel (TR)

Weight :

1.312g

Rds On (Max) @ Id, Vgs :

2.4m Ω @ 80A, 10V

Gate to Source Voltage (Vgs) :

20V

Mounting Type :

Surface Mount

Avalanche Energy Rating (Eas) :

864 mJ

Height :

9.4mm

Length :

10.8mm

Turn-Off Delay Time :

71 ns

Fall Time (Typ) :

17 ns

REACH SVHC :

No SVHC

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Drain-source On Resistance-Max :

0.0024Ohm

Element Configuration :

Single

Transistor Application :

SWITCHING

Number of Pins :

7

Series :

PowerTrench®

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

FET Type :

N-Channel

Threshold Voltage :

1V

Vgs (Max) :

±20V

Power Dissipation :

214W

Gate Charge (Qg) (Max) @ Vgs :

109nC @ 10V