FDB024N06
- Mfr.Part #
- FDB024N06
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- POWER FIELD-EFFECT TRANSISTOR, 1
- Stock
- 30,554
- In Stock :
- 30,554
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Elements :
- 1
- Turn-Off Delay Time :
- 348 ns
- Number of Pins :
- 3
- Mount :
- Surface Mount
- Resistance :
- 2.4MOhm
- Length :
- 10.67mm
- REACH SVHC :
- No SVHC
- Factory Lead Time :
- 8 Weeks
- JESD-30 Code :
- R-PSSO-G2
- Mounting Type :
- Surface Mount
- Vgs (Max) :
- ±20V
- Width :
- 9.65mm
- Case Connection :
- DRAIN
- Height :
- 4.83mm
- FET Type :
- N-Channel
- JESD-609 Code :
- e3
- Pbfree Code :
- yes
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drain to Source Breakdown Voltage :
- 60V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- ECCN Code :
- EAR99
- Element Configuration :
- Single
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Packaging :
- Tape and Reel (TR)
- Gate to Source Voltage (Vgs) :
- 20V
- RoHS Status :
- ROHS3 Compliant
- Rds On (Max) @ Id, Vgs :
- 2.4m Ω @ 75A, 10V
- Operating Temperature :
- -55°C~175°C TJ
- Published :
- 2013
- Terminal Finish :
- Tin (Sn)
- Transistor Element Material :
- SILICON
- Transistor Application :
- SWITCHING
- Number of Terminations :
- 2
- Gate Charge (Qg) (Max) @ Vgs :
- 226nC @ 10V
- Fall Time (Typ) :
- 250 ns
- Continuous Drain Current (ID) :
- 265A
- Terminal Form :
- Gull wing
- Power Dissipation :
- 395W
- Power Dissipation-Max :
- 395W Tc
- Operating Mode :
- ENHANCEMENT MODE
- Weight :
- 1.762g
- Input Capacitance (Ciss) (Max) @ Vds :
- 14885pF @ 25V
- Current - Continuous Drain (Id) @ 25°C :
- 120A Tc
- Radiation Hardening :
- No
- Lead Free :
- Lead Free
- Rise Time :
- 324ns
- Turn On Delay Time :
- 134 ns
- Vgs(th) (Max) @ Id :
- 4.5V @ 250μA
- Threshold Voltage :
- 3.5V
- Series :
- PowerTrench®
- Datasheets
- FDB024N06

N-Channel Tape & Reel (TR) 2.4m Ω @ 75A, 10V ±20V 14885pF @ 25V 226nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
FDB024N06 belongs to the family of N-channel PowerTrench? MOSFETs manufactured by ON Semiconductor. Based on the advanced PowerTrench? process, MOSFET FDB024N06 is able to minimize the on-state resistance while maintaining superior switching performance. Due to its high quality and reliable performance, it is well suited for motor drives, uninterruptible power supplies, and synchronous rectification.
FDB024N06 Features
Low gate charge
Superior switching performance
Advanced PowerTrench? process
Available in the D2-PAK package
Excellent power and current handling capability
FDB024N06 Applications
Battery protection circuit
Renewable system
Motor drives
Uninterruptible power supplies
Synchronous rectification for ATX/server/telecom PSU
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