FDB024N06
- Mfr.Part #
- FDB024N06
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- POWER FIELD-EFFECT TRANSISTOR, 1
- Stock
- 30,554
- In Stock :
- 30,554
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Transistor Element Material :
- SILICON
- Element Configuration :
- Single
- Pbfree Code :
- yes
- Transistor Application :
- SWITCHING
- FET Type :
- N-Channel
- Number of Pins :
- 3
- Gate to Source Voltage (Vgs) :
- 20V
- Operating Temperature :
- -55°C~175°C TJ
- Case Connection :
- DRAIN
- Height :
- 4.83mm
- Lead Free :
- Lead Free
- Width :
- 9.65mm
- Turn On Delay Time :
- 134 ns
- RoHS Status :
- ROHS3 Compliant
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Terminal Finish :
- Tin (Sn)
- Power Dissipation :
- 395W
- Current - Continuous Drain (Id) @ 25°C :
- 120A Tc
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Published :
- 2013
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Radiation Hardening :
- No
- Factory Lead Time :
- 8 Weeks
- Operating Mode :
- ENHANCEMENT MODE
- Packaging :
- Tape and Reel (TR)
- Continuous Drain Current (ID) :
- 265A
- Turn-Off Delay Time :
- 348 ns
- Series :
- PowerTrench®
- Mounting Type :
- Surface Mount
- Terminal Form :
- Gull wing
- JESD-609 Code :
- e3
- Mount :
- Surface Mount
- Number of Terminations :
- 2
- Vgs (Max) :
- ±20V
- ECCN Code :
- EAR99
- Fall Time (Typ) :
- 250 ns
- Weight :
- 1.762g
- Number of Elements :
- 1
- Threshold Voltage :
- 3.5V
- Rds On (Max) @ Id, Vgs :
- 2.4m Ω @ 75A, 10V
- Rise Time :
- 324ns
- Drain to Source Breakdown Voltage :
- 60V
- REACH SVHC :
- No SVHC
- JESD-30 Code :
- R-PSSO-G2
- Power Dissipation-Max :
- 395W Tc
- Gate Charge (Qg) (Max) @ Vgs :
- 226nC @ 10V
- Resistance :
- 2.4MOhm
- Vgs(th) (Max) @ Id :
- 4.5V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds :
- 14885pF @ 25V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Length :
- 10.67mm
- Datasheets
- FDB024N06

N-Channel Tape & Reel (TR) 2.4m Ω @ 75A, 10V ±20V 14885pF @ 25V 226nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
FDB024N06 belongs to the family of N-channel PowerTrench? MOSFETs manufactured by ON Semiconductor. Based on the advanced PowerTrench? process, MOSFET FDB024N06 is able to minimize the on-state resistance while maintaining superior switching performance. Due to its high quality and reliable performance, it is well suited for motor drives, uninterruptible power supplies, and synchronous rectification.
FDB024N06 Features
Low gate charge
Superior switching performance
Advanced PowerTrench? process
Available in the D2-PAK package
Excellent power and current handling capability
FDB024N06 Applications
Battery protection circuit
Renewable system
Motor drives
Uninterruptible power supplies
Synchronous rectification for ATX/server/telecom PSU
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