FDB024N08BL7

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Packaging :

Tape and Reel (TR)

Height :

4.7mm

Continuous Drain Current (ID) :

229A

Pbfree Code :

yes

Series :

PowerTrench®

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

DS Breakdown Voltage-Min :

80V

Case Connection :

DRAIN

RoHS Status :

ROHS3 Compliant

Transistor Application :

SWITCHING

Turn On Delay Time :

47 ns

Rise Time :

66ns

Peak Reflow Temperature (Cel) :

245

Element Configuration :

Single

Drain to Source Voltage (Vdss) :

80V

Terminal Finish :

Tin (Sn)

JEDEC-95 Code :

TO-263CB

Input Capacitance (Ciss) (Max) @ Vds :

13530pF @ 40V

Number of Elements :

1

Number of Pins :

7

Mounting Type :

Surface Mount

Transistor Element Material :

SILICON

FET Type :

N-Channel

Rds On (Max) @ Id, Vgs :

2.4m Ω @ 100A, 10V

Power Dissipation :

246W

Length :

10.2mm

Weight :

1.312g

Power Dissipation-Max :

246W Tc

Width :

9.4mm

Drain-source On Resistance-Max :

0.0024Ohm

Turn-Off Delay Time :

87 ns

Operating Mode :

ENHANCEMENT MODE

JESD-30 Code :

R-PSSO-G6

Vgs(th) (Max) @ Id :

4.5V @ 250μA

Terminal Form :

Gull wing

Package / Case :

TO-263-7, D2Pak (6 Leads + Tab)

Mount :

Surface Mount

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Number of Terminations :

6

Factory Lead Time :

16 Weeks

Gate Charge (Qg) (Max) @ Vgs :

178nC @ 10V

Radiation Hardening :

No

Published :

2014

Vgs (Max) :

±20V

Operating Temperature :

-55°C~175°C TJ

JESD-609 Code :

e3

Fall Time (Typ) :

41 ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Gate to Source Voltage (Vgs) :

20V

Current - Continuous Drain (Id) @ 25°C :

120A Tc