FDB024N04AL7

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Mfr.Part #
FDB024N04AL7
Manufacturer
onsemi
Package / Case
TO-263-7, D2Pak (6 Leads + Tab)
Datasheet
Download
Description
MOSFET N-CH 40V 100A TO263-7
Stock
1,520
In Stock :
1,520

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Height :
9.4mm
Power Dissipation :
214W
Mount :
Surface Mount
FET Type :
N-Channel
Turn-Off Delay Time :
71 ns
Package / Case :
TO-263-7, D2Pak (6 Leads + Tab)
Element Configuration :
Single
Transistor Element Material :
SILICON
Terminal Finish :
Tin (Sn)
ECCN Code :
EAR99
Length :
10.8mm
Packaging :
Tape and Reel (TR)
Turn On Delay Time :
17 ns
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Weight :
1.312g
Rise Time :
8ns
Vgs(th) (Max) @ Id :
3V @ 250µA
Drain to Source Breakdown Voltage :
40V
Continuous Drain Current (ID) :
219A
Series :
PowerTrench®
Width :
4.3mm
JESD-30 Code :
R-PSSO-G6
Terminal Form :
Gull wing
Additional Feature :
ULTRA-LOW RESISTANCE
Avalanche Energy Rating (Eas) :
864 mJ
Case Connection :
DRAIN
Gate Charge (Qg) (Max) @ Vgs :
109nC @ 10V
Threshold Voltage :
1V
Number of Terminations :
6
Radiation Hardening :
No
Drive Voltage (Max Rds On,Min Rds On) :
10V
Factory Lead Time :
16 Weeks
RoHS Status :
ROHS3 Compliant
Transistor Application :
SWITCHING
Current - Continuous Drain (Id) @ 25°C :
100A Tc
Operating Temperature :
-55°C~175°C TJ
Gate to Source Voltage (Vgs) :
20V
Input Capacitance (Ciss) (Max) @ Vds :
7300pF @ 25V
Drain-source On Resistance-Max :
0.0024Ohm
Number of Pins :
7
Pbfree Code :
yes
Rds On (Max) @ Id, Vgs :
2.4m Ω @ 80A, 10V
Vgs (Max) :
±20V
JESD-609 Code :
e3
Power Dissipation-Max :
214W Tc
REACH SVHC :
No SVHC
Mounting Type :
Surface Mount
Number of Elements :
1
Fall Time (Typ) :
17 ns
Lifecycle Status :
ACTIVE (Last Updated: 4 days ago)
Operating Mode :
ENHANCEMENT MODE
Datasheets
FDB024N04AL7
Introducing Transistors - FETs, MOSFETs - Single onsemi FDB024N04AL7 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-263-7, D2Pak (6 Leads + Tab), Number of Terminations:6, Operating Temperature:-55°C~175°C TJ, Number of Pins:7, Mounting Type:Surface Mount, FDB024N04AL7 pinout, FDB024N04AL7 datasheet PDF, FDB024N04AL7 amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FDB024N04AL7 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FDB024N04AL7


N-Channel Tape & Reel (TR) 2.4m Ω @ 80A, 10V ±20V 7300pF @ 25V 109nC @ 10V TO-263-7, D2Pak (6 Leads + Tab)

FDB024N04AL7 Overview


When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 864 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 7300pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 219A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=40V. And this device has 40V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 71 ns.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 17 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Threshold voltage is the point at which an electrical device is set to activate any one of its operations, and this transistor has 1V threshold voltage. By using drive voltage (10V), this device helps reduce its overall power consumption.

FDB024N04AL7 Features


the avalanche energy rating (Eas) is 864 mJ
a continuous drain current (ID) of 219A
a drain-to-source breakdown voltage of 40V voltage
the turn-off delay time is 71 ns
a threshold voltage of 1V


FDB024N04AL7 Applications


There are a lot of ON Semiconductor
FDB024N04AL7 applications of single MOSFETs transistors.


  • LCD/LED TV
  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
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