FDB024N04AL7

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

N-Channel

Power Dissipation :

214W

Rds On (Max) @ Id, Vgs :

2.4m Ω @ 80A, 10V

Transistor Application :

SWITCHING

Radiation Hardening :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Series :

PowerTrench®

Height :

9.4mm

Input Capacitance (Ciss) (Max) @ Vds :

7300pF @ 25V

Gate to Source Voltage (Vgs) :

20V

Drain to Source Breakdown Voltage :

40V

Threshold Voltage :

1V

Turn On Delay Time :

17 ns

Factory Lead Time :

16 Weeks

Terminal Finish :

Tin (Sn)

Fall Time (Typ) :

17 ns

Package / Case :

TO-263-7, D2Pak (6 Leads + Tab)

Number of Pins :

7

Pbfree Code :

yes

REACH SVHC :

No SVHC

Length :

10.8mm

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Element Configuration :

Single

Continuous Drain Current (ID) :

219A

Number of Elements :

1

Drive Voltage (Max Rds On,Min Rds On) :

10V

Terminal Form :

Gull wing

Number of Terminations :

6

Rise Time :

8ns

JESD-30 Code :

R-PSSO-G6

RoHS Status :

ROHS3 Compliant

Avalanche Energy Rating (Eas) :

864 mJ

Drain-source On Resistance-Max :

0.0024Ohm

Vgs (Max) :

±20V

Turn-Off Delay Time :

71 ns

Mount :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

100A Tc

Mounting Type :

Surface Mount

Packaging :

Tape and Reel (TR)

Case Connection :

DRAIN

Width :

4.3mm

Power Dissipation-Max :

214W Tc

Vgs(th) (Max) @ Id :

3V @ 250µA

Operating Mode :

ENHANCEMENT MODE

JESD-609 Code :

e3

Additional Feature :

ULTRA-LOW RESISTANCE

ECCN Code :

EAR99

Weight :

1.312g

Gate Charge (Qg) (Max) @ Vgs :

109nC @ 10V

Operating Temperature :

-55°C~175°C TJ