FDB082N15A

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Factory Lead Time :

8 Weeks

Drain to Source Breakdown Voltage :

150V

Resistance :

8.2mOhm

Width :

9.65mm

Pbfree Code :

yes

Transistor Element Material :

SILICON

Turn-Off Delay Time :

61 ns

FET Type :

N-Channel

Transistor Application :

SWITCHING

Additional Feature :

ULTRA-LOW RESISTANCE

Terminal Form :

Gull wing

Pulsed Drain Current-Max (IDM) :

420A

Power Dissipation :

231W

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Weight :

1.31247g

Power Dissipation-Max :

294W Tc

Vgs (Max) :

±20V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Height :

4.83mm

Number of Elements :

1

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Length :

10.67mm

RoHS Status :

ROHS3 Compliant

JESD-609 Code :

e3

Gate Charge (Qg) (Max) @ Vgs :

84nC @ 10V

Current - Continuous Drain (Id) @ 25°C :

117A Tc

Vgs(th) (Max) @ Id :

4V @ 250µA

Case Connection :

DRAIN

Gate to Source Voltage (Vgs) :

20V

Rise Time :

58ns

Radiation Hardening :

No

JESD-30 Code :

R-PSSO-G2

Avalanche Energy Rating (Eas) :

542 mJ

Element Configuration :

Single

ECCN Code :

EAR99

Packaging :

Tape and Reel (TR)

Number of Pins :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Mode :

ENHANCEMENT MODE

Terminal Finish :

Tin (Sn)

Series :

PowerTrench®

Continuous Drain Current (ID) :

105A

Operating Temperature :

-55°C~175°C TJ

Mounting Type :

Surface Mount

Fall Time (Typ) :

26 ns

Number of Terminations :

2

Rds On (Max) @ Id, Vgs :

8.2m Ω @ 75A, 10V

Input Capacitance (Ciss) (Max) @ Vds :

6040pF @ 25V

Lead Free :

Lead Free

Turn On Delay Time :

22 ns

Mount :

Surface Mount