FDB082N15A

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Pulsed Drain Current-Max (IDM) :

420A

Lead Free :

Lead Free

JESD-609 Code :

e3

Avalanche Energy Rating (Eas) :

542 mJ

Vgs (Max) :

±20V

Series :

PowerTrench®

Radiation Hardening :

No

Rds On (Max) @ Id, Vgs :

8.2m Ω @ 75A, 10V

JESD-30 Code :

R-PSSO-G2

Height :

4.83mm

Number of Terminations :

2

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Fall Time (Typ) :

26 ns

Mounting Type :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

117A Tc

RoHS Status :

ROHS3 Compliant

Terminal Finish :

Tin (Sn)

Length :

10.67mm

Operating Mode :

ENHANCEMENT MODE

Turn On Delay Time :

22 ns

Additional Feature :

ULTRA-LOW RESISTANCE

Mount :

Surface Mount

Operating Temperature :

-55°C~175°C TJ

Rise Time :

58ns

ECCN Code :

EAR99

Resistance :

8.2mOhm

Number of Pins :

3

Factory Lead Time :

8 Weeks

Turn-Off Delay Time :

61 ns

Packaging :

Tape and Reel (TR)

Drain to Source Breakdown Voltage :

150V

Pbfree Code :

yes

Power Dissipation :

231W

Width :

9.65mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Case Connection :

DRAIN

Gate to Source Voltage (Vgs) :

20V

Gate Charge (Qg) (Max) @ Vgs :

84nC @ 10V

FET Type :

N-Channel

Number of Elements :

1

Continuous Drain Current (ID) :

105A

Power Dissipation-Max :

294W Tc

Weight :

1.31247g

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Transistor Application :

SWITCHING

Element Configuration :

Single

Terminal Form :

Gull wing

Input Capacitance (Ciss) (Max) @ Vds :

6040pF @ 25V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs(th) (Max) @ Id :

4V @ 250µA