FDB075N15A

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Mode :

ENHANCEMENT MODE

Avalanche Energy Rating (Eas) :

588 mJ

Drain to Source Breakdown Voltage :

150V

Weight :

1.31247g

Height :

4.83mm

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

FET Type :

N-Channel

Series :

PowerTrench®

Fall Time (Typ) :

21 ns

JESD-30 Code :

R-PSSO-G2

Element Configuration :

Single

Contact Plating :

Tin

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Lead Free :

Lead Free

Terminal Form :

Gull wing

Number of Elements :

1

Turn-Off Delay Time :

62 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Power Dissipation-Max :

333W Tc

Vgs(th) (Max) @ Id :

4V @ 250µA

Length :

10.67mm

Number of Terminations :

2

Mount :

Surface Mount

Transistor Element Material :

SILICON

Case Connection :

DRAIN

Gate to Source Voltage (Vgs) :

20V

Radiation Hardening :

No

Vgs (Max) :

±20V

Published :

2013

Drive Voltage (Max Rds On,Min Rds On) :

10V

Power Dissipation :

333W

Factory Lead Time :

12 Weeks

Pbfree Code :

yes

Width :

9.65mm

Packaging :

Tape and Reel (TR)

Additional Feature :

ULTRA-LOW RESISTANCE

Drain-source On Resistance-Max :

0.0075Ohm

Number of Pins :

3

JESD-609 Code :

e3

Operating Temperature :

-55°C~175°C TJ

Continuous Drain Current (ID) :

130A

Current - Continuous Drain (Id) @ 25°C :

130A Tc

Mounting Type :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

100nC @ 10V

RoHS Status :

ROHS3 Compliant

ECCN Code :

EAR99

Turn On Delay Time :

28 ns

Input Capacitance (Ciss) (Max) @ Vds :

7350pF @ 75V

Rds On (Max) @ Id, Vgs :

7.5m Ω @ 100A, 10V

Rise Time :

37ns

Pulsed Drain Current-Max (IDM) :

522A