FDB070AN06A0

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Mode :

ENHANCEMENT MODE

Published :

2003

Operating Temperature :

-55°C~175°C TJ

FET Type :

N-Channel

ECCN Code :

EAR99

Dual Supply Voltage :

60V

Gate to Source Voltage (Vgs) :

20V

Continuous Drain Current (ID) :

80A

Mounting Type :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

15A Ta 80A Tc

Input Capacitance (Ciss) (Max) @ Vds :

3000pF @ 25V

Number of Elements :

1

Vgs (Max) :

±20V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Factory Lead Time :

8 Weeks

Series :

PowerTrench®

Radiation Hardening :

No

Gate Charge (Qg) (Max) @ Vgs :

66nC @ 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Transistor Application :

SWITCHING

Number of Pins :

3

Mount :

Surface Mount

Vgs(th) (Max) @ Id :

4V @ 250µA

Fall Time (Typ) :

35 ns

Termination :

SMD/SMT

JESD-30 Code :

R-PSSO-G2

Width :

11.33mm

REACH SVHC :

No SVHC

Terminal Finish :

Tin (Sn)

Transistor Element Material :

SILICON

Power Dissipation-Max :

175W Tc

Lead Free :

Lead Free

Resistance :

7mOhm

Nominal Vgs :

4 V

Weight :

1.31247g

Pbfree Code :

yes

Packaging :

Tape and Reel (TR)

Element Configuration :

Single

Case Connection :

DRAIN

Length :

10.67mm

Voltage - Rated DC :

60V

Turn-Off Delay Time :

27 ns

Turn On Delay Time :

12 ns

Current Rating :

80A

Terminal Form :

Gull wing

Rds On (Max) @ Id, Vgs :

7m Ω @ 80A, 10V

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Power Dissipation :

175W

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Terminations :

2

Height :

4.83mm

JESD-609 Code :

e3

Threshold Voltage :

4V

Drain to Source Breakdown Voltage :

60V

Rise Time :

159ns