FDB070AN06A0
- Mfr.Part #
- FDB070AN06A0
- Manufacturer
- onsemi
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 15A/80A D2PAK
- Stock
- 16,653
- In Stock :
- 16,653
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- ECCN Code :
- EAR99
- Pbfree Code :
- yes
- RoHS Status :
- ROHS3 Compliant
- JESD-30 Code :
- R-PSSO-G2
- Number of Terminations :
- 2
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Power Dissipation-Max :
- 175W Tc
- Mount :
- Surface Mount
- Fall Time (Typ) :
- 35 ns
- Case Connection :
- DRAIN
- Weight :
- 1.31247g
- Operating Temperature :
- -55°C~175°C TJ
- Operating Mode :
- ENHANCEMENT MODE
- Dual Supply Voltage :
- 60V
- Radiation Hardening :
- No
- Terminal Finish :
- Tin (Sn)
- Mounting Type :
- Surface Mount
- Gate to Source Voltage (Vgs) :
- 20V
- Termination :
- SMD/SMT
- Published :
- 2003
- Nominal Vgs :
- 4 V
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Height :
- 4.83mm
- Transistor Element Material :
- SILICON
- Number of Elements :
- 1
- Terminal Form :
- Gull wing
- Series :
- PowerTrench®
- Transistor Application :
- SWITCHING
- Width :
- 11.33mm
- Current - Continuous Drain (Id) @ 25°C :
- 15A Ta 80A Tc
- FET Type :
- N-Channel
- Threshold Voltage :
- 4V
- Factory Lead Time :
- 8 Weeks
- Continuous Drain Current (ID) :
- 80A
- Drain to Source Breakdown Voltage :
- 60V
- Lead Free :
- Lead Free
- Power Dissipation :
- 175W
- Element Configuration :
- Single
- Rise Time :
- 159ns
- Gate Charge (Qg) (Max) @ Vgs :
- 66nC @ 10V
- REACH SVHC :
- No SVHC
- Rds On (Max) @ Id, Vgs :
- 7m Ω @ 80A, 10V
- JESD-609 Code :
- e3
- Length :
- 10.67mm
- Turn On Delay Time :
- 12 ns
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Resistance :
- 7mOhm
- Packaging :
- Tape and Reel (TR)
- Vgs (Max) :
- ±20V
- Current Rating :
- 80A
- Number of Pins :
- 3
- Input Capacitance (Ciss) (Max) @ Vds :
- 3000pF @ 25V
- Turn-Off Delay Time :
- 27 ns
- Voltage - Rated DC :
- 60V
- Datasheets
- FDB070AN06A0
FDB070AN06A0 Documents

N-Channel Tape & Reel (TR) 7m Ω @ 80A, 10V ±20V 3000pF @ 25V 66nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
FDB070AN06A0 Description
FDB070AN06A0 is a 60V N-Channel PowerTrench? MOSFET. The latest shielded gate PowerTrench? MOSFET FDB070AN06A0, which combines a smaller QSYNC and soft reverse-recovery intrinsic body diode performance with fast switching, can substantially improve the efficiency of synchronous rectification. The Operating and Storage Temperature Range is between -55 and 175℃. And the Transistor FDB070AN06A0 is in the SC-70-3 package with 175W power dissipation.
FDB070AN06A0 Features
-
RDS(on) = 6.1m? (Typ.) @ VGS = 10V, ID = 80A
-
QG(tot) = 51nC (Typ.) @ VGS = 10V
-
Low Miller Charge
-
Low Qrr Body Diode
-
UIS Capability (Single Pulse and Repetitive Pulse)
FDB070AN06A0 Applications
-
Synchronous Rectification for ATX
-
Server
-
Telecom PSU
-
Battery Protection Circuit
-
Motor Drives and Uninterruptible Power Supplies
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