FDB060AN08A0
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- Mfr.Part #
- FDB060AN08A0
- Manufacturer
- onsemi
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 75V 16A/80A D2PAK
- Stock
- 8,866
- In Stock ：
- 8,866
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Power Dissipation :
- 255W
- Weight :
- 1.31247g
- Number of Terminations :
- 2
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- JESD-609 Code :
- e3
- Rds On (Max) @ Id, Vgs :
- 6m Ω @ 80A, 10V
- Height :
- 4.83mm
- Drive Voltage (Max Rds On,Min Rds On) :
- 6V 10V
- Gate Charge (Qg) (Max) @ Vgs :
- 95nC @ 10V
- Lead Free :
- Lead Free
- Fall Time (Typ) :
- 38 ns
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Operating Mode :
- ENHANCEMENT MODE
- Voltage - Rated DC :
- 75V
- Terminal Finish :
- Tin (Sn)
- RoHS Status :
- ROHS3 Compliant
- Radiation Hardening :
- No
- Length :
- 10.67mm
- Pbfree Code :
- yes
- Power Dissipation-Max :
- 255W Tc
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Rise Time :
- 79ns
- Number of Elements :
- 1
- Input Capacitance (Ciss) (Max) @ Vds :
- 5150pF @ 25V
- Vgs (Max) :
- ±20V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- FET Type :
- N-Channel
- Continuous Drain Current (ID) :
- 80A
- Operating Temperature :
- -55°C~175°C TJ
- Factory Lead Time :
- 8 Weeks
- Width :
- 11.33mm
- Element Configuration :
- Single
- Gate to Source Voltage (Vgs) :
- 20V
- Packaging :
- Tape and Reel (TR)
- Turn On Delay Time :
- 19 ns
- Avalanche Energy Rating (Eas) :
- 350 mJ
- Case Connection :
- DRAIN
- Mount :
- Surface Mount
- Resistance :
- 6mOhm
- Current Rating :
- 80A
- Current - Continuous Drain (Id) @ 25°C :
- 16A Ta 80A Tc
- JESD-30 Code :
- R-PSSO-G2
- ECCN Code :
- EAR99
- Terminal Form :
- Gull wing
- Turn-Off Delay Time :
- 37 ns
- Mounting Type :
- Surface Mount
- Drain to Source Breakdown Voltage :
- 75V
- Transistor Element Material :
- SILICON
- Series :
- PowerTrench®
- Transistor Application :
- SWITCHING
- Datasheets
- FDB060AN08A0
N-Channel Tape & Reel (TR) 6m Ω @ 80A, 10V ±20V 5150pF @ 25V 95nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
FDB060AN08A0 Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 350 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 5150pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 80A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 75V, and this device has a drainage-to-source breakdown voltage of 75VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 37 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 19 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.Using drive voltage (6V 10V), this device contributes to a reduction in overall power consumption.
FDB060AN08A0 Features
the avalanche energy rating (Eas) is 350 mJ
a continuous drain current (ID) of 80A
a drain-to-source breakdown voltage of 75V voltage
the turn-off delay time is 37 ns
FDB060AN08A0 Applications
There are a lot of ON Semiconductor
FDB060AN08A0 applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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