FDB050AN06A0

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Element Material :

SILICON

Number of Elements :

1

Continuous Drain Current (ID) :

80A

JESD-30 Code :

R-PSSO-G2

Operating Mode :

ENHANCEMENT MODE

Rds On (Max) @ Id, Vgs :

5m Ω @ 80A, 10V

Mount :

Surface Mount

Power Dissipation :

245W

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tape and Reel (TR)

Current Rating :

80A

Rise Time :

160ns

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Weight :

1.31247g

Gate to Source Voltage (Vgs) :

20V

Number of Pins :

3

Case Connection :

DRAIN

Factory Lead Time :

9 Weeks

Drain to Source Breakdown Voltage :

60V

Element Configuration :

Single

Fall Time (Typ) :

29 ns

Voltage - Rated DC :

60V

Series :

PowerTrench®

Gate Charge (Qg) (Max) @ Vgs :

80nC @ 10V

FET Type :

N-Channel

Number of Terminations :

2

Turn On Delay Time :

16 ns

Resistance :

5mOhm

ECCN Code :

EAR99

Vgs(th) (Max) @ Id :

4V @ 250µA

Width :

9.65mm

Mounting Type :

Surface Mount

Radiation Hardening :

No

JESD-609 Code :

e3

RoHS Status :

ROHS3 Compliant

Contact Plating :

Tin

Operating Temperature :

-55°C~175°C TJ

Vgs (Max) :

±20V

Length :

10.67mm

Input Capacitance (Ciss) (Max) @ Vds :

3900pF @ 25V

Published :

2013

Transistor Application :

SWITCHING

Power Dissipation-Max :

245W Tc

Terminal Form :

Gull wing

Turn-Off Delay Time :

28 ns

Height :

4.83mm

Lead Free :

Lead Free

Pbfree Code :

yes

Avalanche Energy Rating (Eas) :

470 mJ

Current - Continuous Drain (Id) @ 25°C :

18A Ta 80A Tc