FDB050AN06A0

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Continuous Drain Current (ID) :

80A

Current - Continuous Drain (Id) @ 25°C :

18A Ta 80A Tc

Rise Time :

160ns

FET Type :

N-Channel

Drain to Source Breakdown Voltage :

60V

Rds On (Max) @ Id, Vgs :

5m Ω @ 80A, 10V

Number of Elements :

1

Current Rating :

80A

Mounting Type :

Surface Mount

Power Dissipation :

245W

Input Capacitance (Ciss) (Max) @ Vds :

3900pF @ 25V

ECCN Code :

EAR99

Resistance :

5mOhm

Gate to Source Voltage (Vgs) :

20V

Avalanche Energy Rating (Eas) :

470 mJ

Vgs(th) (Max) @ Id :

4V @ 250µA

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Width :

9.65mm

Power Dissipation-Max :

245W Tc

Series :

PowerTrench®

Element Configuration :

Single

Turn-Off Delay Time :

28 ns

Lead Free :

Lead Free

Transistor Application :

SWITCHING

Radiation Hardening :

No

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Pbfree Code :

yes

Fall Time (Typ) :

29 ns

Mount :

Surface Mount

Voltage - Rated DC :

60V

JESD-609 Code :

e3

Vgs (Max) :

±20V

Terminal Form :

Gull wing

Operating Temperature :

-55°C~175°C TJ

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE

Weight :

1.31247g

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tape and Reel (TR)

RoHS Status :

ROHS3 Compliant

Height :

4.83mm

Published :

2013

Number of Terminations :

2

Turn On Delay Time :

16 ns

Length :

10.67mm

Contact Plating :

Tin

Factory Lead Time :

9 Weeks

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Number of Pins :

3

Case Connection :

DRAIN

Gate Charge (Qg) (Max) @ Vgs :

80nC @ 10V

JESD-30 Code :

R-PSSO-G2