FDB045AN08A0-F085

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Terminations :

2

Input Capacitance (Ciss) (Max) @ Vds :

6600pF @ 25V

Rise Time :

88ns

Number of Pins :

3

Avalanche Energy Rating (Eas) :

600 mJ

Pbfree Code :

yes

Series :

Automotive, AEC-Q101, PowerTrench®

Terminal Finish :

Tin (Sn)

Weight :

1.31247g

FET Type :

N-Channel

Vgs(th) (Max) @ Id :

4V @ 250µA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Factory Lead Time :

2 Weeks

Packaging :

Cut Tape (CT)

Gate to Source Voltage (Vgs) :

20V

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON

Mount :

Surface Mount

Continuous Drain Current (ID) :

80A

Published :

2013

Drain-source On Resistance-Max :

0.0045ohm

Gate Charge (Qg) (Max) @ Vgs :

138nC @ 10V

Turn-Off Delay Time :

40 ns

Power Dissipation :

310W

Fall Time (Typ) :

45 ns

JESD-30 Code :

R-PSSO-G2

Operating Temperature :

-55°C~175°C TJ

Rds On (Max) @ Id, Vgs :

4.5m Ω @ 80A, 10V

Mounting Type :

Surface Mount

RoHS Status :

ROHS3 Compliant

Element Configuration :

Single

Lifecycle Status :

ACTIVE (Last Updated: 1 week ago)

Drain to Source Breakdown Voltage :

75V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Radiation Hardening :

No

Vgs (Max) :

±20V

Number of Elements :

1

Current - Continuous Drain (Id) @ 25°C :

19A Ta

Turn On Delay Time :

18 ns

Transistor Application :

SWITCHING

Case Connection :

DRAIN

Terminal Form :

Gull wing

JESD-609 Code :

e3

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Power Dissipation-Max :

310W Tc