FDB045AN08A0

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Mfr.Part #
FDB045AN08A0
Manufacturer
onsemi
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Datasheet
Download
Description
MOSFET N-CH 75V 19A/90A D2PAK
Stock
2,837
In Stock :
2,837

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Published :
2001
Avalanche Energy Rating (Eas) :
600 mJ
Turn-Off Delay Time :
40 ns
JESD-609 Code :
e3
Lifecycle Status :
ACTIVE (Last Updated: 4 days ago)
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Current - Continuous Drain (Id) @ 25°C :
19A Ta 90A Tc
ECCN Code :
EAR99
Number of Elements :
1
Mount :
Surface Mount
Turn On Delay Time :
18 ns
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Operating Temperature :
-55°C~175°C TJ
Gate to Source Voltage (Vgs) :
20V
Reach Compliance Code :
not_compliant
Fall Time (Typ) :
45 ns
Number of Pins :
3
Transistor Element Material :
SILICON
Package / Case :
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Terminal Form :
Gull wing
JESD-30 Code :
R-PSSO-G2
Gate Charge (Qg) (Max) @ Vgs :
138nC @ 10V
Continuous Drain Current (ID) :
80A
FET Type :
N-Channel
Lead Free :
Lead Free
Vgs(th) (Max) @ Id :
4V @ 250µA
Transistor Application :
SWITCHING
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Rds On (Max) @ Id, Vgs :
4.5m Ω @ 80A, 10V
Power Dissipation :
310W
Height :
4.83mm
Current Rating :
19A
Pbfree Code :
yes
Case Connection :
DRAIN
Series :
PowerTrench®
Element Configuration :
Single
Weight :
1.31247g
Qualification Status :
Not Qualified
Contact Plating :
Tin
Drive Voltage (Max Rds On,Min Rds On) :
6V 10V
Drain to Source Breakdown Voltage :
75V
Number of Terminations :
2
Operating Mode :
ENHANCEMENT MODE
Packaging :
Tape and Reel (TR)
Vgs (Max) :
±20V
Resistance :
4.5mOhm
Rise Time :
88ns
Mounting Type :
Surface Mount
Power Dissipation-Max :
310W Tc
Voltage - Rated DC :
75V
Threshold Voltage :
4V
Input Capacitance (Ciss) (Max) @ Vds :
6600pF @ 25V
RoHS Status :
ROHS3 Compliant
Length :
10.67mm
Factory Lead Time :
11 Weeks
Width :
11.33mm
REACH SVHC :
No SVHC
Datasheets
FDB045AN08A0
Introducing Transistors - FETs, MOSFETs - Single onsemi FDB045AN08A0 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~175°C TJ, Number of Pins:3, Package / Case:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, Number of Terminations:2, Mounting Type:Surface Mount, FDB045AN08A0 pinout, FDB045AN08A0 datasheet PDF, FDB045AN08A0 amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FDB045AN08A0 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FDB045AN08A0


N-Channel Tape & Reel (TR) 4.5m Ω @ 80A, 10V ±20V 6600pF @ 25V 138nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

FDB045AN08A0 Description


Advanced processing techniques are used in ON semiconductor technology to achieve ultra-low on-resistance per silicon area. Lowering conduction loss, improving switching performance, increasing dv/dt rate, and increasing avalanche energy are all goals of this technology. These devices are designed to ensure a high level of dv/dt capability for the most demanding applications, in addition to a significant reduction in on-resistance.



FDB045AN08A0 Features


?Roson>=3.9 millimeters (Typ.) ID = 80 A @ Vgs=10 V


?Vgs = 10 V, Qgw = 92 nC (Typ.)


?Miller Charge is Low


?Body Diode with Low Qa


?Usability of UIS (Single Pulse and Repetitive Pulse)



FDB045AN08A0 Applications


?Atx/Server/Telecom PSU Synchronous Rectification


?Battery Protection Circuit (BPC) is a circuit that protects the battery


?Uninterruptible Power Supplies and Motor Drives


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