FDB045AN08A0
- Mfr.Part #
- FDB045AN08A0
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- POWER FIELD-EFFECT TRANSISTOR, 1
- Stock
- 2,837
- In Stock :
- 2,837
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drain to Source Breakdown Voltage :
- 75V
- Gate Charge (Qg) (Max) @ Vgs :
- 138nC @ 10V
- Contact Plating :
- Tin
- Avalanche Energy Rating (Eas) :
- 600 mJ
- Terminal Form :
- Gull wing
- Mounting Type :
- Surface Mount
- Number of Pins :
- 3
- Gate to Source Voltage (Vgs) :
- 20V
- JESD-30 Code :
- R-PSSO-G2
- Current Rating :
- 19A
- RoHS Status :
- ROHS3 Compliant
- Published :
- 2001
- Rds On (Max) @ Id, Vgs :
- 4.5m Ω @ 80A, 10V
- ECCN Code :
- EAR99
- Factory Lead Time :
- 11 Weeks
- JESD-609 Code :
- e3
- Width :
- 11.33mm
- Vgs (Max) :
- ±20V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Number of Terminations :
- 2
- Current - Continuous Drain (Id) @ 25°C :
- 19A Ta 90A Tc
- Fall Time (Typ) :
- 45 ns
- Element Configuration :
- Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Packaging :
- Tape and Reel (TR)
- Lead Free :
- Lead Free
- Rise Time :
- 88ns
- Length :
- 10.67mm
- Reach Compliance Code :
- not_compliant
- Qualification Status :
- Not Qualified
- Case Connection :
- DRAIN
- Threshold Voltage :
- 4V
- Number of Elements :
- 1
- Weight :
- 1.31247g
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Power Dissipation-Max :
- 310W Tc
- Drive Voltage (Max Rds On,Min Rds On) :
- 6V 10V
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- REACH SVHC :
- No SVHC
- Operating Mode :
- ENHANCEMENT MODE
- Turn-Off Delay Time :
- 40 ns
- Resistance :
- 4.5mOhm
- Mount :
- Surface Mount
- Power Dissipation :
- 310W
- Continuous Drain Current (ID) :
- 80A
- Series :
- PowerTrench®
- Transistor Application :
- SWITCHING
- Height :
- 4.83mm
- Pbfree Code :
- yes
- Operating Temperature :
- -55°C~175°C TJ
- Input Capacitance (Ciss) (Max) @ Vds :
- 6600pF @ 25V
- Voltage - Rated DC :
- 75V
- Transistor Element Material :
- SILICON
- FET Type :
- N-Channel
- Turn On Delay Time :
- 18 ns
- Datasheets
- FDB045AN08A0

N-Channel Tape & Reel (TR) 4.5m Ω @ 80A, 10V ±20V 6600pF @ 25V 138nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
FDB045AN08A0 Description
Advanced processing techniques are used in ON semiconductor technology to achieve ultra-low on-resistance per silicon area. Lowering conduction loss, improving switching performance, increasing dv/dt rate, and increasing avalanche energy are all goals of this technology. These devices are designed to ensure a high level of dv/dt capability for the most demanding applications, in addition to a significant reduction in on-resistance.
FDB045AN08A0 Features
?Roson>=3.9 millimeters (Typ.) ID = 80 A @ Vgs=10 V
?Vgs = 10 V, Qgw = 92 nC (Typ.)
?Miller Charge is Low
?Body Diode with Low Qa
?Usability of UIS (Single Pulse and Repetitive Pulse)
FDB045AN08A0 Applications
?Atx/Server/Telecom PSU Synchronous Rectification
?Battery Protection Circuit (BPC) is a circuit that protects the battery
?Uninterruptible Power Supplies and Motor Drives
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