FDB035N10A

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Height :

4.83mm

Drain to Source Breakdown Voltage :

100V

JESD-30 Code :

R-PSSO-G2

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Pins :

3

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Series :

PowerTrench®

Rds On (Max) @ Id, Vgs :

3.5m Ω @ 75A, 10V

Additional Feature :

ULTRA-LOW RESISTANCE

ECCN Code :

EAR99

FET Type :

N-Channel

Case Connection :

DRAIN

Mounting Type :

Surface Mount

Vgs(th) (Max) @ Id :

4V @ 250µA

Lead Free :

Lead Free

Terminal Finish :

Tin (Sn)

Element Configuration :

Single

Width :

9.65mm

Power Dissipation-Max :

333W Tc

Turn-Off Delay Time :

37 ns

Avalanche Energy Rating (Eas) :

558 mJ

Operating Temperature :

-55°C~175°C TJ

Factory Lead Time :

8 Weeks

JESD-609 Code :

e3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Turn On Delay Time :

22 ns

Published :

2013

Length :

10.67mm

Transistor Application :

SWITCHING

Power Dissipation :

333W

Operating Mode :

ENHANCEMENT MODE

Gate to Source Voltage (Vgs) :

20V

Resistance :

3.5mOhm

Weight :

1.31247g

Packaging :

Tape and Reel (TR)

Number of Terminations :

2

Vgs (Max) :

±20V

Pbfree Code :

yes

Transistor Element Material :

SILICON

Pulsed Drain Current-Max (IDM) :

704A

Rise Time :

54ns

Input Capacitance (Ciss) (Max) @ Vds :

7295pF @ 25V

Mount :

Surface Mount

Radiation Hardening :

No

Continuous Drain Current (ID) :

214A

Current - Continuous Drain (Id) @ 25°C :

120A Tc

Gate Charge (Qg) (Max) @ Vgs :

116nC @ 10V

Terminal Form :

Gull wing

Number of Elements :

1

RoHS Status :

ROHS3 Compliant

Fall Time (Typ) :

11 ns