FDB035N10A

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Resistance :

3.5mOhm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Width :

9.65mm

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

120A Tc

Case Connection :

DRAIN

Element Configuration :

Single

ECCN Code :

EAR99

Radiation Hardening :

No

Turn-Off Delay Time :

37 ns

Input Capacitance (Ciss) (Max) @ Vds :

7295pF @ 25V

Transistor Application :

SWITCHING

Length :

10.67mm

FET Type :

N-Channel

Fall Time (Typ) :

11 ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Additional Feature :

ULTRA-LOW RESISTANCE

Vgs (Max) :

±20V

Terminal Form :

Gull wing

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

RoHS Status :

ROHS3 Compliant

Mount :

Surface Mount

Height :

4.83mm

Factory Lead Time :

8 Weeks

Vgs(th) (Max) @ Id :

4V @ 250µA

JESD-609 Code :

e3

Lead Free :

Lead Free

Gate Charge (Qg) (Max) @ Vgs :

116nC @ 10V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Number of Elements :

1

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

-55°C~175°C TJ

Pulsed Drain Current-Max (IDM) :

704A

Series :

PowerTrench®

Mounting Type :

Surface Mount

Power Dissipation :

333W

Packaging :

Tape and Reel (TR)

Rise Time :

54ns

JESD-30 Code :

R-PSSO-G2

Drain to Source Breakdown Voltage :

100V

Weight :

1.31247g

Pbfree Code :

yes

Turn On Delay Time :

22 ns

Gate to Source Voltage (Vgs) :

20V

Rds On (Max) @ Id, Vgs :

3.5m Ω @ 75A, 10V

Power Dissipation-Max :

333W Tc

Published :

2013

Number of Terminations :

2

Number of Pins :

3

Avalanche Energy Rating (Eas) :

558 mJ

Terminal Finish :

Tin (Sn)

Continuous Drain Current (ID) :

214A