FDB035AN06A0

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Pbfree Code :

yes

Weight :

1.31247g

Continuous Drain Current (ID) :

80A

Input Capacitance (Ciss) (Max) @ Vds :

6400pF @ 25V

Number of Elements :

1

Transistor Application :

SWITCHING

Vgs(th) (Max) @ Id :

4V @ 250µA

REACH SVHC :

No SVHC

JESD-609 Code :

e3

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Case Connection :

DRAIN

Power Dissipation :

310W

RoHS Status :

ROHS3 Compliant

Voltage - Rated DC :

60V

Power Dissipation-Max :

310W Tc

Number of Pins :

3

Factory Lead Time :

8 Weeks

Operating Mode :

ENHANCEMENT MODE

FET Type :

N-Channel

Drain to Source Breakdown Voltage :

60V

Element Configuration :

Single

Height :

4.83mm

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Contact Plating :

Tin

Fall Time (Typ) :

13 ns

Terminal Form :

Gull wing

Radiation Hardening :

No

Drain Current-Max (Abs) (ID) :

22A

Width :

11.33mm

Mount :

Surface Mount

Lead Free :

Lead Free

Length :

10.67mm

Number of Terminations :

2

Vgs (Max) :

±20V

Packaging :

Tape and Reel (TR)

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Avalanche Energy Rating (Eas) :

625 mJ

Resistance :

3.5mOhm

Current Rating :

80A

JESD-30 Code :

R-PSSO-G2

Threshold Voltage :

4V

Rise Time :

93ns

Operating Temperature :

-55°C~175°C TJ

Series :

PowerTrench®

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Gate to Source Voltage (Vgs) :

20V

Gate Charge (Qg) (Max) @ Vgs :

124nC @ 10V

Rds On (Max) @ Id, Vgs :

3.5m Ω @ 80A, 10V

Transistor Element Material :

SILICON

Turn On Delay Time :

15 ns

Mounting Type :

Surface Mount

Published :

2002

Turn-Off Delay Time :

38 ns

Current - Continuous Drain (Id) @ 25°C :

22A Ta 80A Tc