FDB035AN06A0

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Turn On Delay Time :

15 ns

Vgs(th) (Max) @ Id :

4V @ 250µA

Vgs (Max) :

±20V

ECCN Code :

EAR99

Fall Time (Typ) :

13 ns

Input Capacitance (Ciss) (Max) @ Vds :

6400pF @ 25V

Number of Pins :

3

Length :

10.67mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Number of Elements :

1

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Operating Temperature :

-55°C~175°C TJ

Gate Charge (Qg) (Max) @ Vgs :

124nC @ 10V

Packaging :

Tape and Reel (TR)

Continuous Drain Current (ID) :

80A

Turn-Off Delay Time :

38 ns

FET Type :

N-Channel

Width :

11.33mm

Power Dissipation :

310W

Current Rating :

80A

Resistance :

3.5mOhm

Drain to Source Breakdown Voltage :

60V

Case Connection :

DRAIN

Factory Lead Time :

8 Weeks

Height :

4.83mm

REACH SVHC :

No SVHC

Rise Time :

93ns

Voltage - Rated DC :

60V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Weight :

1.31247g

Operating Mode :

ENHANCEMENT MODE

Current - Continuous Drain (Id) @ 25°C :

22A Ta 80A Tc

Rds On (Max) @ Id, Vgs :

3.5m Ω @ 80A, 10V

Power Dissipation-Max :

310W Tc

Published :

2002

RoHS Status :

ROHS3 Compliant

Threshold Voltage :

4V

Mount :

Surface Mount

Terminal Form :

Gull wing

Avalanche Energy Rating (Eas) :

625 mJ

Drain Current-Max (Abs) (ID) :

22A

JESD-609 Code :

e3

Contact Plating :

Tin

JESD-30 Code :

R-PSSO-G2

Mounting Type :

Surface Mount

Transistor Element Material :

SILICON

Series :

PowerTrench®

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Gate to Source Voltage (Vgs) :

20V

Pbfree Code :

yes

Element Configuration :

Single

Number of Terminations :

2

Radiation Hardening :

No

Lead Free :

Lead Free