FDB029N06

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Application :

SWITCHING

Length :

10.67mm

Weight :

1.762g

Power Dissipation-Max :

231W Tc

Turn On Delay Time :

39 ns

Number of Terminations :

2

Transistor Element Material :

SILICON

Published :

2009

Height :

4.83mm

Packaging :

Tape and Reel (TR)

Element Configuration :

Single

Operating Mode :

ENHANCEMENT MODE

Vgs (Max) :

±20V

Mount :

Surface Mount

Series :

PowerTrench®

Current - Continuous Drain (Id) @ 25°C :

120A Tc

FET Type :

N-Channel

Radiation Hardening :

No

Input Capacitance (Ciss) (Max) @ Vds :

9815pF @ 25V

Turn-Off Delay Time :

54 ns

Pulsed Drain Current-Max (IDM) :

772A

Operating Temperature :

-55°C~175°C TJ

Case Connection :

DRAIN

Terminal Form :

Gull wing

Power Dissipation :

231W

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Vgs(th) (Max) @ Id :

4.5V @ 250μA

Rds On (Max) @ Id, Vgs :

3.1m Ω @ 75A, 10V

Factory Lead Time :

8 Weeks

Fall Time (Typ) :

33 ns

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Number of Elements :

1

Drain to Source Breakdown Voltage :

60V

ECCN Code :

EAR99

Drive Voltage (Max Rds On,Min Rds On) :

10V

JESD-30 Code :

R-PSSO-G2

Gate to Source Voltage (Vgs) :

20V

Number of Pins :

3

Continuous Drain Current (ID) :

193A

Gate Charge (Qg) (Max) @ Vgs :

151nC @ 10V

Mounting Type :

Surface Mount

Width :

9.65mm

RoHS Status :

ROHS3 Compliant

Rise Time :

178ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pbfree Code :

yes