FCPF9N60NT

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Gate to Source Voltage (Vgs) :

30V

RoHS Status :

ROHS3 Compliant

Turn-Off Delay Time :

36.9 ns

Input Capacitance (Ciss) (Max) @ Vds :

1240pF @ 100V

Transistor Application :

SWITCHING

Package / Case :

TO-220-3 Full Pack

Continuous Drain Current (ID) :

9A

Vgs(th) (Max) @ Id :

4V @ 250µA

Operating Temperature :

-55°C~150°C TJ

Rds On (Max) @ Id, Vgs :

385m Ω @ 4.5A, 10V

Operating Mode :

ENHANCEMENT MODE

Power Dissipation :

29.8W

Fall Time (Typ) :

10.2 ns

Number of Pins :

3

Radiation Hardening :

No

Drain Current-Max (Abs) (ID) :

9A

Vgs (Max) :

±30V

Rise Time :

8.7ns

Weight :

2.27g

Mounting Type :

Through Hole

Packaging :

Tube

Published :

2013

Transistor Element Material :

SILICON

Terminal Finish :

Tin (Sn)

Series :

SuperMOS™

JESD-609 Code :

e3

Height :

15.9mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Length :

10.16mm

Mount :

Through Hole

Pulsed Drain Current-Max (IDM) :

27A

Drain to Source Breakdown Voltage :

600V

Turn On Delay Time :

12.7 ns

ECCN Code :

EAR99

Factory Lead Time :

12 Weeks

Width :

4.7mm

Power Dissipation-Max :

29.8W Tc

Drive Voltage (Max Rds On,Min Rds On) :

10V

Pbfree Code :

yes

Element Configuration :

Single

FET Type :

N-Channel

REACH SVHC :

No SVHC

Case Connection :

Isolated

Number of Terminations :

3

Current - Continuous Drain (Id) @ 25°C :

9A Tc

Gate Charge (Qg) (Max) @ Vgs :

29nC @ 10V

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

JEDEC-95 Code :

TO-220AB

Number of Elements :

1