FCPF1300N80Z
- Mfr.Part #
- FCPF1300N80Z
- Manufacturer
- onsemi
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET N-CH 800V 4A TO220F
- Stock
- 6
- In Stock :
- 6
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drain Current-Max (Abs) (ID) :
- 4A
- Rise Time :
- 8.3ns
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Package / Case :
- TO-220-3 Full Pack
- Width :
- 4.9mm
- Number of Pins :
- 3
- Series :
- SuperFET® II
- Terminal Finish :
- Tin (Sn)
- Operating Temperature :
- -55°C~150°C TJ
- Packaging :
- Tube
- Fall Time (Typ) :
- 6 ns
- Continuous Drain Current (ID) :
- 4A
- Vgs (Max) :
- ±20V
- Vgs(th) (Max) @ Id :
- 4.5V @ 400μA
- Weight :
- 2.27g
- Reach Compliance Code :
- not_compliant
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Rds On (Max) @ Id, Vgs :
- 1.3 Ω @ 2A, 10V
- Element Configuration :
- Single
- Published :
- 2017
- Input Capacitance (Ciss) (Max) @ Vds :
- 880pF @ 100V
- Gate Charge (Qg) (Max) @ Vgs :
- 21nC @ 10V
- Turn-Off Delay Time :
- 33 ns
- ECCN Code :
- EAR99
- Mounting Type :
- Through Hole
- Length :
- 10.36mm
- RoHS Status :
- ROHS3 Compliant
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Power Dissipation-Max :
- 24W Tc
- Number of Channels :
- 1
- Pbfree Code :
- yes
- Gate to Source Voltage (Vgs) :
- 20V
- Height :
- 16.07mm
- Current - Continuous Drain (Id) @ 25°C :
- 4A Tc
- Drain to Source Breakdown Voltage :
- 800V
- FET Type :
- N-Channel
- Turn On Delay Time :
- 14 ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mount :
- Through Hole
- Factory Lead Time :
- 18 Weeks
- JESD-609 Code :
- e3
- Datasheets
- FCPF1300N80Z

N-Channel Tube 1.3 Ω @ 2A, 10V ±20V 880pF @ 100V 21nC @ 10V TO-220-3 Full Pack
FCPF1300N80Z Description
The FCPF1300N80Z SuperFET? II MOSFET is from a brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, and provide superior switching performance, dv/dt rate and higher avalanche energy. In addition, the internal gate-source ESD diode allows withstanding over 2kV HBM surge stress. SuperFET? II MOSFET is a brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, and provide superior switching performance, dv/dt rate and higher avalanche energy. In addition, the internal gate-source ESD diode allows withstanding over 2kV HBM surge stress.
FCPF1300N80Z Features
-
RDS(on) = 1.05 Ω(Typ.)
-
Ultra-Low Gate Charge (Typ. Qg = 16.2 nC)
-
Low Eoss (Typ. 1.57 uJ @ 400V)
-
Low Effective Output Capacitance (Typ. Coss(eff.) = 48.7 pF)
-
100% Avalanche Tested
-
RoHS Compliant
-
ESD Improved Capability
FCPF1300N80Z Application
-
AC-DC Power Supplies
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