FCPF13N60NT
- Mfr.Part #
- FCPF13N60NT
- Manufacturer
- onsemi
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 13A TO220F
- Stock
- 163
- In Stock :
- 163
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Current - Continuous Drain (Id) @ 25°C :
- 13A Tc
- Continuous Drain Current (ID) :
- 13A
- Number of Elements :
- 1
- Package / Case :
- TO-220-3 Full Pack
- Terminal Finish :
- Tin (Sn)
- Packaging :
- Tube
- Published :
- 2004
- Rds On (Max) @ Id, Vgs :
- 258m Ω @ 6.5A, 10V
- Gate Charge (Qg) (Max) @ Vgs :
- 39.5nC @ 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Rise Time :
- 10.6ns
- JEDEC-95 Code :
- TO-220AB
- Length :
- 10.16mm
- Mounting Type :
- Through Hole
- Input Capacitance (Ciss) (Max) @ Vds :
- 1765pF @ 100V
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Series :
- SuperMOS™
- Turn On Delay Time :
- 14.5 ns
- Operating Mode :
- ENHANCEMENT MODE
- FET Type :
- N-Channel
- Radiation Hardening :
- No
- Drain-source On Resistance-Max :
- 0.258Ohm
- Turn-Off Delay Time :
- 45 ns
- Transistor Application :
- SWITCHING
- RoHS Status :
- ROHS3 Compliant
- Vgs (Max) :
- ±30V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- REACH SVHC :
- No SVHC
- Threshold Voltage :
- 2V
- Width :
- 4.7mm
- Power Dissipation-Max :
- 33.8W Tc
- ECCN Code :
- EAR99
- Weight :
- 2.27g
- Mount :
- Through Hole
- Height :
- 15.9mm
- JESD-609 Code :
- e3
- Operating Temperature :
- -55°C~150°C TJ
- Factory Lead Time :
- 12 Weeks
- Case Connection :
- Isolated
- Element Configuration :
- Single
- Drain to Source Breakdown Voltage :
- 600V
- Fall Time (Typ) :
- 9.8 ns
- Power Dissipation :
- 33.8W
- Transistor Element Material :
- SILICON
- Gate to Source Voltage (Vgs) :
- 30V
- Pbfree Code :
- yes
- Number of Terminations :
- 3
- Number of Pins :
- 3
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Datasheets
- FCPF13N60NT

N-Channel Tube 258m Ω @ 6.5A, 10V ±30V 1765pF @ 100V 39.5nC @ 10V TO-220-3 Full Pack
FCPF13N60NT is an N-channel MOSFET WITH 600V. The SupreMOS? MOSFET FCPF13N60NT is the next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs. The advanced technology and precise process control provides lowest Rsp on-resistance, superior switching performance and ruggedness. SupreMOS MOSFET is suitable for high frequency switching power converter applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
FCPF13N60NT Features
Low effective output capacitance ( Typ. Coss.eff = 145pF )
RDS(on) = 244m? ( Typ.) @ VGS = 10V, ID = 6.5A
Ultra low gate charge ( Typ. Qg = 30.4nC )
100% avalanche tested
RoHS compliant
FCPF13N60NT Applications
LCD/LED/PDP TV
Lighting
Solar Inverter
AC-DC Power Supply
ATX power applications
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