FCPF11N60F

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Gate to Source Voltage (Vgs) :

30V

Threshold Voltage :

5V

Turn-Off Delay Time :

119 ns

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Number of Pins :

3

REACH SVHC :

No SVHC

Radiation Hardening :

No

Current - Continuous Drain (Id) @ 25°C :

11A Tc

RoHS Status :

ROHS3 Compliant

Fall Time (Typ) :

56 ns

Rds On (Max) @ Id, Vgs :

380m Ω @ 5.5A, 10V

Mounting Type :

Through Hole

Packaging :

Tube

Factory Lead Time :

12 Weeks

Terminal Finish :

Tin (Sn)

FET Type :

N-Channel

Continuous Drain Current (ID) :

11A

Vgs(th) (Max) @ Id :

5V @ 250μA

Case Connection :

Isolated

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

1490pF @ 25V

Rise Time :

98ns

Power Dissipation-Max :

36W Tc

Pbfree Code :

yes

Series :

SuperFET™

Mount :

Through Hole

Operating Temperature :

-55°C~150°C TJ

JESD-609 Code :

e3

Current Rating :

11A

Element Configuration :

Single

Turn On Delay Time :

34 ns

Vgs (Max) :

±30V

Number of Elements :

1

Package / Case :

TO-220-3 Full Pack

Lead Free :

Lead Free

JEDEC-95 Code :

TO-220AB

Transistor Element Material :

SILICON

Weight :

2.27g

Transistor Application :

SWITCHING

Drain to Source Breakdown Voltage :

600V

ECCN Code :

EAR99

Number of Terminations :

3

Gate Charge (Qg) (Max) @ Vgs :

52nC @ 10V

Voltage - Rated DC :

600V

Operating Mode :

ENHANCEMENT MODE

Drive Voltage (Max Rds On,Min Rds On) :

10V

Power Dissipation :

125W