FCPF099N65S3

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Mfr.Part #
FCPF099N65S3
Manufacturer
onsemi
Package / Case
TO-220-3 Full Pack
Datasheet
Download
Description
MOSFET N-CH 650V 30A TO220F
Stock
20,710
In Stock :
20,710

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Factory Lead Time :
12 Weeks
Reach Compliance Code :
not_compliant
Current - Continuous Drain (Id) @ 25°C :
30A Tc
Pbfree Code :
yes
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Drain to Source Voltage (Vdss) :
650V
Mounting Type :
Through Hole
Gate Charge (Qg) (Max) @ Vgs :
57nC @ 10V
Series :
SuperFET® III
RoHS Status :
ROHS3 Compliant
Element Configuration :
Single
Operating Temperature :
-55°C~150°C TJ
Power Dissipation-Max :
43W Tc
Lifecycle Status :
ACTIVE (Last Updated: 2 days ago)
Mount :
Through Hole
Weight :
2.27g
Vgs(th) (Max) @ Id :
4.5V @ 3mA
JESD-609 Code :
e3
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Package / Case :
TO-220-3 Full Pack
Input Capacitance (Ciss) (Max) @ Vds :
2310pF @ 400V
Vgs (Max) :
±30V
Rds On (Max) @ Id, Vgs :
99m Ω @ 15A, 10V
Terminal Finish :
Tin (Sn)
FET Type :
N-Channel
Moisture Sensitivity Level (MSL) :
Not Applicable
Drive Voltage (Max Rds On,Min Rds On) :
10V
Datasheets
FCPF099N65S3
Introducing Transistors - FETs, MOSFETs - Single onsemi FCPF099N65S3 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Operating Temperature:-55°C~150°C TJ, Package / Case:TO-220-3 Full Pack, FCPF099N65S3 pinout, FCPF099N65S3 datasheet PDF, FCPF099N65S3 amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FCPF099N65S3 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FCPF099N65S3


N-Channel 99m Ω @ 15A, 10V ±30V 2310pF @ 400V 57nC @ 10V 650V TO-220-3 Full Pack

FCPF099N65S3 Description

The FCPF099N65S3 MOSFET is a brand new high voltage superjunction (SJ) MOSFET family from ON Semiconductor that uses charge balance technology to achieve remarkable low onresistance and low gate charge performance. This cutting-edge technology is designed to reduce conduction loss, improve switching performance, and sustain high dv/dt rates. As a result, the SUPERFET III MOSFET Easy drive series aids in the management of EMI concerns and facilitates design execution.

FCPF099N65S3 Features

700 V @ TJ= 150°C
Ultra Low Gate Charge (Typ. Qg= 57 nC)
Low Effective Output Capacitance (Typ. Coss(eff.)= 517 pF)
100% Avalanche Tested
Typ. RDS(on)= 85 m
These Devices are Pb?Free and are RoHS Compliant

FCPF099N65S3 Applications

Telecom / Server Power Supplies
UPS / Solar
Industrial Power Supplies
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