FCPF11N60NT

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

35.6nC @ 10V

Mounting Type :

Through Hole

Turn-Off Delay Time :

42 ns

Terminal Finish :

Tin (Sn)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Number of Pins :

3

Threshold Voltage :

2V

Mount :

Through Hole

Fall Time (Typ) :

10 ns

Gate to Source Voltage (Vgs) :

30V

Drain-source On Resistance-Max :

0.299Ohm

Current - Continuous Drain (Id) @ 25°C :

10.8A Tc

JEDEC-95 Code :

TO-220AB

Vgs(th) (Max) @ Id :

4V @ 250µA

Height :

15.9mm

Radiation Hardening :

No

Operating Temperature :

-55°C~150°C TJ

Case Connection :

Isolated

Package / Case :

TO-220-3 Full Pack

Pbfree Code :

yes

Operating Mode :

ENHANCEMENT MODE

Vgs (Max) :

±30V

Rise Time :

9.1ns

Weight :

2.27g

Transistor Application :

SWITCHING

Power Dissipation :

32.1W

RoHS Status :

ROHS3 Compliant

Packaging :

Tube

Continuous Drain Current (ID) :

10.8A

Drain to Source Breakdown Voltage :

600V

Length :

10.16mm

Transistor Element Material :

SILICON

Turn On Delay Time :

13.6 ns

Number of Terminations :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

299m Ω @ 5.4A, 10V

Element Configuration :

Single

Factory Lead Time :

15 Weeks

Published :

2004

Power Dissipation-Max :

32.1W Tc

FET Type :

N-Channel

REACH SVHC :

No SVHC

Input Capacitance (Ciss) (Max) @ Vds :

1505pF @ 100V

Width :

4.7mm

JESD-609 Code :

e3

Series :

SuperMOS™

Number of Elements :

1

ECCN Code :

EAR99