FCPF850N80Z

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance (Ciss) (Max) @ Vds :

1315pF @ 100V

RoHS Status :

ROHS3 Compliant

Width :

4.9mm

Turn-Off Delay Time :

40 ns

Mount :

Through Hole

Vgs(th) (Max) @ Id :

4.5V @ 600μA

Drive Voltage (Max Rds On,Min Rds On) :

10V

Reach Compliance Code :

not_compliant

Height :

16.07mm

Drain to Source Breakdown Voltage :

800V

Gate to Source Voltage (Vgs) :

20V

Length :

10.36mm

Pbfree Code :

yes

Weight :

2.27g

Rds On (Max) @ Id, Vgs :

850m Ω @ 3A, 10V

Number of Channels :

1

Element Configuration :

Single

Operating Temperature :

-55°C~150°C TJ

Mounting Type :

Through Hole

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain Current-Max (Abs) (ID) :

6A

Current - Continuous Drain (Id) @ 25°C :

6A Tc

Power Dissipation-Max :

28.4W Tc

Packaging :

Tube

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

JESD-609 Code :

e3

Factory Lead Time :

13 Weeks

Turn On Delay Time :

16 ns

Number of Pins :

3

Published :

2017

Terminal Finish :

Tin (Sn)

ECCN Code :

EAR99

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Fall Time (Typ) :

4.5 ns

Vgs (Max) :

±20V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Rise Time :

10ns

Gate Charge (Qg) (Max) @ Vgs :

29nC @ 10V

Series :

SuperFET® II

Continuous Drain Current (ID) :

6A

FET Type :

N-Channel

Package / Case :

TO-220-3 Full Pack