FCPF850N80Z
- Mfr.Part #
- FCPF850N80Z
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- POWER FIELD-EFFECT TRANSISTOR, N
- Stock
- 17,679
- In Stock :
- 17,679
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- FET Type :
- N-Channel
- Element Configuration :
- Single
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Published :
- 2017
- Input Capacitance (Ciss) (Max) @ Vds :
- 1315pF @ 100V
- Turn-Off Delay Time :
- 40 ns
- Power Dissipation-Max :
- 28.4W Tc
- Gate to Source Voltage (Vgs) :
- 20V
- Turn On Delay Time :
- 16 ns
- Fall Time (Typ) :
- 4.5 ns
- Factory Lead Time :
- 13 Weeks
- Pbfree Code :
- yes
- Current - Continuous Drain (Id) @ 25°C :
- 6A Tc
- Length :
- 10.36mm
- Terminal Finish :
- Tin (Sn)
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- ECCN Code :
- EAR99
- Height :
- 16.07mm
- Number of Pins :
- 3
- Operating Temperature :
- -55°C~150°C TJ
- RoHS Status :
- ROHS3 Compliant
- Drain Current-Max (Abs) (ID) :
- 6A
- Weight :
- 2.27g
- Gate Charge (Qg) (Max) @ Vgs :
- 29nC @ 10V
- Packaging :
- Tube
- Vgs (Max) :
- ±20V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Mount :
- Through Hole
- Package / Case :
- TO-220-3 Full Pack
- Rise Time :
- 10ns
- Width :
- 4.9mm
- JESD-609 Code :
- e3
- Drain to Source Breakdown Voltage :
- 800V
- Vgs(th) (Max) @ Id :
- 4.5V @ 600μA
- Continuous Drain Current (ID) :
- 6A
- Rds On (Max) @ Id, Vgs :
- 850m Ω @ 3A, 10V
- Series :
- SuperFET® II
- Number of Channels :
- 1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Through Hole
- Reach Compliance Code :
- not_compliant
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Datasheets
- FCPF850N80Z

N-Channel Tube 850m Ω @ 3A, 10V ±20V 1315pF @ 100V 29nC @ 10V TO-220-3 Full Pack
FCPF850N80Z Description
FCPF850N80Z is a type of N-channel SUPERFET II MOSFET that belongs to the brand?new high voltage super?junction (SJ) MOSFET family provided by ON Semiconductor. Based on the charge balance technology, it is able to provide outstanding low on?resistance and lower gate charge performance, minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rates. Over 2kV HBM surge stress can be withstood based on the internal gate-source ESD diode.
FCPF850N80Z Features
-
Advanced charge balance technology
-
Low effective output capacitance
-
Lower gate charge
-
ESD improved capability
-
Available in the TO-220F package
FCPF850N80Z Applications
-
AC-DC power supply
-
LED lighting
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