FCPF7N60YDTU
- Mfr.Part #
- FCPF7N60YDTU
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-220-3 Full Pack, Formed Leads
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 7A TO220F-3
- Stock
- 1
- In Stock :
- 1
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Gate to Source Voltage (Vgs) :
- 30V
- JESD-609 Code :
- e3
- Series :
- SuperFET™
- Package / Case :
- TO-220-3 Full Pack, Formed Leads
- Turn On Delay Time :
- 35 ns
- Radiation Hardening :
- No
- Continuous Drain Current (ID) :
- 7A
- Operating Temperature :
- -55°C~150°C TJ
- Transistor Application :
- SWITCHING
- Turn-Off Delay Time :
- 75 ns
- Operating Mode :
- ENHANCEMENT MODE
- Published :
- 2013
- Current - Continuous Drain (Id) @ 25°C :
- 7A Tc
- FET Type :
- N-Channel
- Mounting Type :
- Through Hole
- Terminal Finish :
- Tin (Sn)
- Mount :
- Through Hole
- JEDEC-95 Code :
- TO-220AB
- Vgs (Max) :
- ±30V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Power Dissipation-Max :
- 31W Tc
- Gate Charge (Qg) (Max) @ Vgs :
- 30nC @ 10V
- Element Configuration :
- Single
- Transistor Element Material :
- SILICON
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Terminations :
- 3
- Rds On (Max) @ Id, Vgs :
- 600m Ω @ 3.5A, 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 920pF @ 25V
- Number of Elements :
- 1
- Drain-source On Resistance-Max :
- 0.6Ohm
- Pbfree Code :
- yes
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- RoHS Status :
- ROHS3 Compliant
- Height :
- 16.07mm
- Number of Pins :
- 3
- Fall Time (Typ) :
- 32 ns
- Width :
- 4.9mm
- Factory Lead Time :
- 12 Weeks
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Rise Time :
- 55ns
- Power Dissipation :
- 31W
- Drain to Source Breakdown Voltage :
- 600V
- ECCN Code :
- EAR99
- Weight :
- 2.565g
- Drain Current-Max (Abs) (ID) :
- 7A
- Packaging :
- Tube
- Case Connection :
- Isolated
- Length :
- 10.36mm
- Datasheets
- FCPF7N60YDTU

N-Channel Tube 600m Ω @ 3.5A, 10V ±30V 920pF @ 25V 30nC @ 10V TO-220-3 Full Pack, Formed Leads
FCPF7N60YDTU Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 920pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 600V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 600V.There is no drain current on this device since the maximum continuous current it can conduct is 7A.As a result of its turn-off delay time, which is 75 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 35 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 30VV.In addition to reducing power consumption, this device uses drive voltage (10V).
FCPF7N60YDTU Features
a continuous drain current (ID) of 7A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 75 ns
FCPF7N60YDTU Applications
There are a lot of ON Semiconductor
FCPF7N60YDTU applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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