FCPF7N60YDTU

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation :

31W

Turn On Delay Time :

35 ns

Input Capacitance (Ciss) (Max) @ Vds :

920pF @ 25V

Terminal Finish :

Tin (Sn)

Operating Temperature :

-55°C~150°C TJ

Current - Continuous Drain (Id) @ 25°C :

7A Tc

Package / Case :

TO-220-3 Full Pack, Formed Leads

Pbfree Code :

yes

Packaging :

Tube

ECCN Code :

EAR99

Gate to Source Voltage (Vgs) :

30V

Turn-Off Delay Time :

75 ns

Weight :

2.565g

Width :

4.9mm

Drain to Source Breakdown Voltage :

600V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Operating Mode :

ENHANCEMENT MODE

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

600m Ω @ 3.5A, 10V

Case Connection :

Isolated

Vgs (Max) :

±30V

Published :

2013

Power Dissipation-Max :

31W Tc

Factory Lead Time :

12 Weeks

Height :

16.07mm

Series :

SuperFET™

Vgs(th) (Max) @ Id :

5V @ 250μA

JEDEC-95 Code :

TO-220AB

Continuous Drain Current (ID) :

7A

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Element Configuration :

Single

Gate Charge (Qg) (Max) @ Vgs :

30nC @ 10V

Radiation Hardening :

No

Number of Pins :

3

Fall Time (Typ) :

32 ns

Rise Time :

55ns

JESD-609 Code :

e3

FET Type :

N-Channel

Mount :

Through Hole

Drain-source On Resistance-Max :

0.6Ohm

Number of Elements :

1

RoHS Status :

ROHS3 Compliant

Number of Terminations :

3

Mounting Type :

Through Hole

Drain Current-Max (Abs) (ID) :

7A

Length :

10.36mm