FCPF7N60NT

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Mfr.Part #
FCPF7N60NT
Manufacturer
onsemi
Package / Case
TO-220-3 Full Pack
Datasheet
Download
Description
MOSFET N-CH 600V 6.8A TO220F
Stock
8,688
In Stock :
8,688

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Operating Temperature :
-55°C~150°C TJ
ECCN Code :
EAR99
Input Capacitance (Ciss) (Max) @ Vds :
960pF @ 100V
Width :
4.9mm
Power Dissipation :
30.5W
Drive Voltage (Max Rds On,Min Rds On) :
10V
Factory Lead Time :
12 Weeks
Fall Time (Typ) :
12 ns
Lifecycle Status :
ACTIVE (Last Updated: 3 days ago)
Transistor Element Material :
SILICON
Mounting Type :
Through Hole
Power Dissipation-Max :
30.5W Tc
Turn-Off Delay Time :
35 ns
FET Type :
N-Channel
Number of Terminations :
3
Threshold Voltage :
2V
Turn On Delay Time :
12 ns
Mount :
Through Hole
Rise Time :
6ns
Height :
16.07mm
Number of Pins :
3
Operating Mode :
ENHANCEMENT MODE
Published :
2013
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Drain to Source Breakdown Voltage :
600V
JESD-609 Code :
e3
Continuous Drain Current (ID) :
6.8A
Vgs(th) (Max) @ Id :
4V @ 250µA
Vgs (Max) :
±30V
Radiation Hardening :
No
Current - Continuous Drain (Id) @ 25°C :
6.8A Tc
Gate to Source Voltage (Vgs) :
30V
REACH SVHC :
No SVHC
RoHS Status :
ROHS3 Compliant
Series :
SupreMOS™
Element Configuration :
Single
Resistance :
600mOhm
JEDEC-95 Code :
TO-220AB
Weight :
2.27g
Pulsed Drain Current-Max (IDM) :
20.4A
Package / Case :
TO-220-3 Full Pack
Length :
10.36mm
Number of Elements :
1
Rds On (Max) @ Id, Vgs :
520m Ω @ 3.4A, 10V
Case Connection :
Isolated
Packaging :
Tube
Gate Charge (Qg) (Max) @ Vgs :
35.6nC @ 10V
Avalanche Energy Rating (Eas) :
79.4 mJ
Transistor Application :
SWITCHING
Terminal Finish :
Tin (Sn)
Pbfree Code :
yes
Lead Free :
Lead Free
Datasheets
FCPF7N60NT
Introducing Transistors - FETs, MOSFETs - Single onsemi FCPF7N60NT from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Mounting Type:Through Hole, Number of Terminations:3, Number of Pins:3, Package / Case:TO-220-3 Full Pack, FCPF7N60NT pinout, FCPF7N60NT datasheet PDF, FCPF7N60NT amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FCPF7N60NT ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FCPF7N60NT


N-Channel Tube 520m Ω @ 3.4A, 10V ±30V 960pF @ 100V 35.6nC @ 10V TO-220-3 Full Pack

FCPF7N60NT Description


The SupreMOS? MOSFET FCPF7N60NT from ON Semiconductor has a voltage of 600V. SupreMOS? MOSFETs are the next generation of high voltage super-junction (SJ) technology, with a deep trench filling method that sets them apart from traditional SJ MOSFETs. Lowest Rsp on-resistance, improved switching performance, and durability are all provided by this modern technology and perfect process control. SupreMOS MOSFETs are well-suited to high-frequency switching power converter applications such as PFC, server/telecom power, FPD TV power, ATX power, and industrial power.



FCPF7N60NT Features


  • RDS(on) = 460m? ( Typ.) @ VGS = 10V, ID = 3.4A

  • Ultra low gate charge ( Typ. Qg = 17.8nC )

  • Low effective output capacitance ( Typ. Coss.eff = 91pF )

  • 100% avalanche tested

  • RoHS compliant



FCPF7N60NT Applications


  • General-purpose amplifier

  • Switching applications

  • Power management

  • Industrial


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