FCPF7N60NT
- Mfr.Part #
- FCPF7N60NT
- Manufacturer
- onsemi
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 6.8A TO220F
- Stock
- 8,688
- In Stock :
- 8,688
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Operating Temperature :
- -55°C~150°C TJ
- ECCN Code :
- EAR99
- Input Capacitance (Ciss) (Max) @ Vds :
- 960pF @ 100V
- Width :
- 4.9mm
- Power Dissipation :
- 30.5W
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Factory Lead Time :
- 12 Weeks
- Fall Time (Typ) :
- 12 ns
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Transistor Element Material :
- SILICON
- Mounting Type :
- Through Hole
- Power Dissipation-Max :
- 30.5W Tc
- Turn-Off Delay Time :
- 35 ns
- FET Type :
- N-Channel
- Number of Terminations :
- 3
- Threshold Voltage :
- 2V
- Turn On Delay Time :
- 12 ns
- Mount :
- Through Hole
- Rise Time :
- 6ns
- Height :
- 16.07mm
- Number of Pins :
- 3
- Operating Mode :
- ENHANCEMENT MODE
- Published :
- 2013
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drain to Source Breakdown Voltage :
- 600V
- JESD-609 Code :
- e3
- Continuous Drain Current (ID) :
- 6.8A
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Vgs (Max) :
- ±30V
- Radiation Hardening :
- No
- Current - Continuous Drain (Id) @ 25°C :
- 6.8A Tc
- Gate to Source Voltage (Vgs) :
- 30V
- REACH SVHC :
- No SVHC
- RoHS Status :
- ROHS3 Compliant
- Series :
- SupreMOS™
- Element Configuration :
- Single
- Resistance :
- 600mOhm
- JEDEC-95 Code :
- TO-220AB
- Weight :
- 2.27g
- Pulsed Drain Current-Max (IDM) :
- 20.4A
- Package / Case :
- TO-220-3 Full Pack
- Length :
- 10.36mm
- Number of Elements :
- 1
- Rds On (Max) @ Id, Vgs :
- 520m Ω @ 3.4A, 10V
- Case Connection :
- Isolated
- Packaging :
- Tube
- Gate Charge (Qg) (Max) @ Vgs :
- 35.6nC @ 10V
- Avalanche Energy Rating (Eas) :
- 79.4 mJ
- Transistor Application :
- SWITCHING
- Terminal Finish :
- Tin (Sn)
- Pbfree Code :
- yes
- Lead Free :
- Lead Free
- Datasheets
- FCPF7N60NT

N-Channel Tube 520m Ω @ 3.4A, 10V ±30V 960pF @ 100V 35.6nC @ 10V TO-220-3 Full Pack
FCPF7N60NT Description
The SupreMOS? MOSFET FCPF7N60NT from ON Semiconductor has a voltage of 600V. SupreMOS? MOSFETs are the next generation of high voltage super-junction (SJ) technology, with a deep trench filling method that sets them apart from traditional SJ MOSFETs. Lowest Rsp on-resistance, improved switching performance, and durability are all provided by this modern technology and perfect process control. SupreMOS MOSFETs are well-suited to high-frequency switching power converter applications such as PFC, server/telecom power, FPD TV power, ATX power, and industrial power.
FCPF7N60NT Features
-
RDS(on) = 460m? ( Typ.) @ VGS = 10V, ID = 3.4A
-
Ultra low gate charge ( Typ. Qg = 17.8nC )
-
Low effective output capacitance ( Typ. Coss.eff = 91pF )
-
100% avalanche tested
-
RoHS compliant
FCPF7N60NT Applications
-
General-purpose amplifier
-
Switching applications
-
Power management
-
Industrial
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