FCPF400N60
- Mfr.Part #
- FCPF400N60
- Manufacturer
- onsemi
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 10A TO220F
- Stock
- 8,248
- In Stock :
- 8,248
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Lead Free :
- Lead Free
- RoHS Status :
- ROHS3 Compliant
- JESD-609 Code :
- e3
- Drain to Source Breakdown Voltage :
- 650V
- Height :
- 16.07mm
- Gate to Source Voltage (Vgs) :
- 20V
- Case Connection :
- Isolated
- Published :
- 2010
- Transistor Application :
- SWITCHING
- REACH SVHC :
- No SVHC
- Rise Time :
- 7ns
- Drain to Source Voltage (Vdss) :
- 600V
- JEDEC-95 Code :
- TO-220AB
- Operating Temperature :
- -55°C~150°C TJ
- Element Configuration :
- Single
- Continuous Drain Current (ID) :
- 10A
- Transistor Element Material :
- SILICON
- Number of Pins :
- 3
- Fall Time (Typ) :
- 6 ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- ECCN Code :
- EAR99
- Number of Elements :
- 1
- Threshold Voltage :
- 2.5V
- FET Type :
- N-Channel
- Length :
- 10.36mm
- Gate Charge (Qg) (Max) @ Vgs :
- 38nC @ 10V
- Power Dissipation-Max :
- 31W Tc
- Operating Mode :
- ENHANCEMENT MODE
- Pbfree Code :
- yes
- Radiation Hardening :
- No
- Current - Continuous Drain (Id) @ 25°C :
- 10A Tc
- Series :
- SuperFET® II
- Vgs(th) (Max) @ Id :
- 3.5V @ 250µA
- Mount :
- Through Hole
- Turn-Off Delay Time :
- 43 ns
- Rds On (Max) @ Id, Vgs :
- 400m Ω @ 5A, 10V
- Mounting Type :
- Through Hole
- Packaging :
- Tube
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Drain-source On Resistance-Max :
- 0.4Ohm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vgs (Max) :
- ±20V
- Weight :
- 2.27g
- Package / Case :
- TO-220-3 Full Pack
- Turn On Delay Time :
- 13 ns
- Terminal Finish :
- Tin (Sn)
- Number of Terminations :
- 3
- Factory Lead Time :
- 15 Weeks
- Input Capacitance (Ciss) (Max) @ Vds :
- 1580pF @ 25V
- Width :
- 4.9mm
- Power Dissipation :
- 31W
- Datasheets
- FCPF400N60

N-Channel Tube 400m Ω @ 5A, 10V ±20V 1580pF @ 25V 38nC @ 10V 600V TO-220-3 Full Pack
FCPF400N60 Description
The FCPF400N60 SuperFET? II MOSFET belongs to a new high voltage super-junction (SJ) MOSFET family that uses charge balance technology to achieve exceptional low on-resistance and lower gate charge performance. This technology is designed to reduce conduction loss while also providing greater switching performance, dv/dt rate, and avalanche energy.
FCPF400N60 Features
-
Ultra-low gate charge ( Typ. Qg = 28nC )
-
Low effective output capacitance ( Typ. Coss.eff = 90pF )
-
100% avalanche tested
-
650V @TJ = 150°C
-
Max. RDS(on) = 400mΩ
FCPF400N60 Applications
-
General usage and suitable for many different applications
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