FCPF380N60
- Mfr.Part #
- FCPF380N60
- Manufacturer
- onsemi
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 10.2A TO220F
- Stock
- 18,436
- In Stock :
- 18,436
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Operating Temperature :
- -55°C~150°C TJ
- Vgs(th) (Max) @ Id :
- 3.5V @ 250µA
- Rds On (Max) @ Id, Vgs :
- 380m Ω @ 5A, 10V
- Current - Continuous Drain (Id) @ 25°C :
- 10.2A Tc
- JEDEC-95 Code :
- TO-220AB
- Series :
- SuperFET® II
- Transistor Application :
- SWITCHING
- Gate Charge (Qg) (Max) @ Vgs :
- 40nC @ 10V
- FET Type :
- N-Channel
- Package / Case :
- TO-220-3 Full Pack
- RoHS Status :
- ROHS3 Compliant
- Number of Terminations :
- 3
- Power Dissipation-Max :
- 31W Tc
- Rise Time :
- 7ns
- Continuous Drain Current (ID) :
- 10.2A
- Turn On Delay Time :
- 14 ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Gate to Source Voltage (Vgs) :
- 20V
- Length :
- 10.36mm
- Power Dissipation :
- 31W
- Weight :
- 2.27g
- JESD-609 Code :
- e3
- Factory Lead Time :
- 12 Weeks
- Radiation Hardening :
- No
- Vgs (Max) :
- ±20V
- Drain to Source Breakdown Voltage :
- 650V
- Packaging :
- Tube
- Height :
- 9.19mm
- Input Capacitance (Ciss) (Max) @ Vds :
- 1665pF @ 25V
- Number of Elements :
- 1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Mode :
- ENHANCEMENT MODE
- Mount :
- Through Hole
- ECCN Code :
- EAR99
- Lead Free :
- Lead Free
- Fall Time (Typ) :
- 6 ns
- Drain to Source Voltage (Vdss) :
- 600V
- Terminal Finish :
- Tin (Sn)
- Turn-Off Delay Time :
- 45 ns
- REACH SVHC :
- No SVHC
- Pbfree Code :
- yes
- Mounting Type :
- Through Hole
- Element Configuration :
- Single
- Transistor Element Material :
- SILICON
- Width :
- 4.9mm
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Number of Pins :
- 3
- Case Connection :
- Isolated
- Datasheets
- FCPF380N60

N-Channel Tube 380m Ω @ 5A, 10V ±20V 1665pF @ 25V 40nC @ 10V 600V TO-220-3 Full Pack
FCPF380N60 Description
SuperFET? II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss and provide superior switching performance, dv/dt rate, and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for switching power applications such as PFC, server/telecom power, FPD TV power, ATX power, and industrial power applications.
FCPF380N60 Features
650 V @ TJ = 150°C
Typ. RDS(on) = 330 m?
Ultra Low Gate Charge (Typ. Qg = 30 nC)
Low Effective Output Capacitance (Typ. Coss(eff.) = 95 pF)
100% Avalanche Tested
RoHS Compliant
FCPF380N60 Applications
LCD / LED / PDP TV Lighting
Solar Inverter
AC-DC Power Supply
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