FCPF36N60NT
- Mfr.Part #
- FCPF36N60NT
- Manufacturer
- onsemi
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 36A TO220F
- Stock
- 68,679
- In Stock :
- 68,679
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Package / Case :
- TO-220-3 Full Pack
- Transistor Application :
- SWITCHING
- Vgs (Max) :
- ±30V
- Packaging :
- Tube
- Drain to Source Breakdown Voltage :
- 600V
- Pbfree Code :
- yes
- Fall Time (Typ) :
- 4 ns
- Mount :
- Through Hole
- Drain-source On Resistance-Max :
- 0.09Ohm
- Height :
- 16.07mm
- Terminal Finish :
- Tin (Sn)
- Input Capacitance (Ciss) (Max) @ Vds :
- 4785pF @ 100V
- Gate to Source Voltage (Vgs) :
- 30V
- Rds On (Max) @ Id, Vgs :
- 90m Ω @ 18A, 10V
- Number of Pins :
- 3
- Mounting Type :
- Through Hole
- Published :
- 2013
- JEDEC-95 Code :
- TO-220AB
- Element Configuration :
- Single
- ECCN Code :
- EAR99
- FET Type :
- N-Channel
- Current - Continuous Drain (Id) @ 25°C :
- 36A Tc
- Transistor Element Material :
- SILICON
- RoHS Status :
- ROHS3 Compliant
- Length :
- 10.36mm
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Turn-Off Delay Time :
- 94 ns
- Width :
- 4.9mm
- Weight :
- 2.27g
- Radiation Hardening :
- No
- Turn On Delay Time :
- 23 ns
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- JESD-609 Code :
- e3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Factory Lead Time :
- 12 Weeks
- Operating Mode :
- ENHANCEMENT MODE
- Number of Elements :
- 1
- Gate Charge (Qg) (Max) @ Vgs :
- 112nC @ 10V
- Case Connection :
- Isolated
- Rise Time :
- 22ns
- Operating Temperature :
- -55°C~150°C TJ
- Number of Terminations :
- 3
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Series :
- SupreMOS™
- Continuous Drain Current (ID) :
- 36A
- Datasheets
- FCPF36N60NT

N-Channel Tube 90m Ω @ 18A, 10V ±30V 4785pF @ 100V 112nC @ 10V TO-220-3 Full Pack
FCPF36N60NT Overview
The maximum input capacitance of this device is 4785pF @ 100V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 36A.When VGS=600V, and ID flows to VDS at 600VVDS, the drain-source breakdown voltage is 600V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 94 ns.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 23 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.Using drive voltage (10V), this device helps reduce its power consumption.
FCPF36N60NT Features
a continuous drain current (ID) of 36A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 94 ns
FCPF36N60NT Applications
There are a lot of ON Semiconductor
FCPF36N60NT applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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