FCPF260N65FL1
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- Mfr.Part #
- FCPF260N65FL1
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET N-CH 650V 15A TO220F
- Stock
- 3,351
- In Stock ：
- 3,351
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Rise Time :
- 10.5ns
- Fall Time (Typ) :
- 5.8 ns
- Power Dissipation-Max :
- 36W Tc
- Mount :
- Through Hole
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Continuous Drain (Id) @ 25°C :
- 15A Tc
- Drain to Source Breakdown Voltage :
- 650V
- Turn-Off Delay Time :
- 54 ns
- Pbfree Code :
- yes
- Terminal Finish :
- Tin (Sn)
- Gate to Source Voltage (Vgs) :
- 30V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Continuous Drain Current (ID) :
- 15A
- Vgs (Max) :
- ±20V
- Series :
- FRFET®, SuperFET® II
- Element Configuration :
- Single
- Factory Lead Time :
- 12 Weeks
- Package / Case :
- TO-220-3 Full Pack
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Number of Channels :
- 1
- JESD-609 Code :
- e3
- Mounting Type :
- Through Hole
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Weight :
- 2.27g
- Vgs(th) (Max) @ Id :
- 5V @ 1.5mA
- Packaging :
- Tube
- Reach Compliance Code :
- not_compliant
- Gate Charge (Qg) (Max) @ Vgs :
- 60nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 2340pF @ 100V
- Turn On Delay Time :
- 21.7 ns
- FET Type :
- N-Channel
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Resistance :
- 260mOhm
- RoHS Status :
- ROHS3 Compliant
- ECCN Code :
- EAR99
- Rds On (Max) @ Id, Vgs :
- 260m Ω @ 7.5A, 10V
- Operating Temperature :
- -55°C~150°C TJ
- Datasheets
- FCPF260N65FL1
N-Channel Tube 260m Ω @ 7.5A, 10V ±20V 2340pF @ 100V 60nC @ 10V TO-220-3 Full Pack
FCPF260N65FL1 Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 2340pF @ 100V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 15A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=650V. And this device has 650V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 54 ns.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 21.7 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 30V.By using drive voltage (10V), this device helps reduce its overall power consumption.
FCPF260N65FL1 Features
a continuous drain current (ID) of 15A
a drain-to-source breakdown voltage of 650V voltage
the turn-off delay time is 54 ns
FCPF260N65FL1 Applications
There are a lot of ON Semiconductor
FCPF260N65FL1 applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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